A Fine-Grained Flash-Memory Fragment Recognition Approach for Low-Level Data Recovery

Li Zhang*, Shengang Hao*, Quanxin Zhang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)
Plum Print visual indicator of research metrics
  • Citations
    • Citation Indexes: 1
  • Captures
    • Readers: 7
see details

Abstract

Data recovery from flash memory in the mobile device can effectively reduce the loss caused by data corruption. Type recognition of data fragment is an essential prerequisite to the low-level data recovery. Previous works in this field classify data fragment based on its file type. Still, the classification efficiency is low, especially when the data fragment is a part of a composite file. We propose a fine-grained approach to classifying data fragment from the low-level flash memory to improve the classification accuracy and efficiency. The proposed method redefines flash-memory-page data recognition problem based on the encoding format of the data segment, and applies a hybrid machine learning algorithm to detect the data type of the flash page. The hybrid algorithm can significantly decompose the given data space and reduce the cost of training. The experimental results show that our method achieves better classification accuracy and higher time performance than the existing methods.

Original languageEnglish
Pages (from-to)732-740
Number of pages9
JournalChinese Journal of Electronics
Volume31
Issue number4
DOIs
Publication statusPublished - Jul 2022

Keywords

  • Decision tree
  • Digital forensics
  • Fine-grained
  • Flash fragmentation recognition
  • Machine learning algorithm
  • Support vector machine

Fingerprint

Dive into the research topics of 'A Fine-Grained Flash-Memory Fragment Recognition Approach for Low-Level Data Recovery'. Together they form a unique fingerprint.

Cite this

Zhang, L., Hao, S., & Zhang, Q. (2022). A Fine-Grained Flash-Memory Fragment Recognition Approach for Low-Level Data Recovery. Chinese Journal of Electronics, 31(4), 732-740. https://doi.org/10.1049/cje.2020.00.206