A D-band Frequency Quadrupler with 8.5dB Conversion Gain in 250 nm InP DHBT

Xueni Qin, Yao Li, Liang Zhao, Weihua Yu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work presents a new-designed D-band multiplier with high conversion gain designed in 250 nm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The quadrupler consists of two frequency doublers and a 2-stage common-emitter amplifier, with the embedded harmonic rejection module to suppress the useless signals. As shown in the post-simulation results, the proposed frequency quadrupler achieves a high conversion gain of 8.5 dB at 140 GHz. At a total DC power consumption of 51.1 mW, the output power saturates at 6.4 dBm. The operation frequency occupies a relatively wide bandwidth of 3-dB gain ranging from 124 to 156 GHz (BW3dB = 32 GHz) and a 5-dB gain bandwidth from 116 to 158 GHz (BW5dB = 42 GHz). The design also achieves good harmonic rejection ratios and a power efficiency of 8.37%.

Original languageEnglish
Title of host publication2024 IEEE MTT-S International Wireless Symposium, IWS 2024 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350389999
DOIs
Publication statusPublished - 2024
Event11th IEEE MTT-S International Wireless Symposium, IWS 2024 - Beijing, China
Duration: 16 May 202419 May 2024

Publication series

Name2024 IEEE MTT-S International Wireless Symposium, IWS 2024 - Proceedings

Conference

Conference11th IEEE MTT-S International Wireless Symposium, IWS 2024
Country/TerritoryChina
CityBeijing
Period16/05/2419/05/24

Keywords

  • D-band
  • InP DHBT
  • multiplier
  • quadrupler

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