TY - GEN
T1 - A CMOS Compatible Micro Pirani Gauge with Structure Optimization for Performance Enhancement
AU - Jiao, Rui
AU - Yang, Gai
AU - Wang, Ruoqin
AU - Tang, Yue
AU - Liu, Zhongyi
AU - Xie, Huikai
AU - Yu, Hongyu
AU - Wang, Xiaoyi
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - In this paper, we reported a CMOS compatible micro-Pirani gauge using the CMOS compatible fabrication process. For the first time, we revealed that the tiny fluid conduction gap can not only enhance the sensitivity of the device but also can improve the dynamic measurement range, especially in the high-pressure region making it possible to exceed the 1 atm monitoring domain. Firstly, the CFD simulation was conducted to simulate the performance of devices with a tiny gap (T) and large gap (L) and validate the proposed discoveries. Then, a CMOS-compatible fabrication method was created with an overall dry etching method. Finally, the experimental results demonstrated the proposed idea that the T-type device could provide more than two folds higher sensitivity (4.01 μA/Torr) compared with the L-type one (1.63 μA/Torr), and a larger dynamic measurement range was achieved by the T-type gauge (0.01∼760 Torr or more) compared with the L-type one (0.01∼100 Torr). Besides, the device also showed high stability with a small variation value (3.8‰ @ 1.3e-4 Torr).
AB - In this paper, we reported a CMOS compatible micro-Pirani gauge using the CMOS compatible fabrication process. For the first time, we revealed that the tiny fluid conduction gap can not only enhance the sensitivity of the device but also can improve the dynamic measurement range, especially in the high-pressure region making it possible to exceed the 1 atm monitoring domain. Firstly, the CFD simulation was conducted to simulate the performance of devices with a tiny gap (T) and large gap (L) and validate the proposed discoveries. Then, a CMOS-compatible fabrication method was created with an overall dry etching method. Finally, the experimental results demonstrated the proposed idea that the T-type device could provide more than two folds higher sensitivity (4.01 μA/Torr) compared with the L-type one (1.63 μA/Torr), and a larger dynamic measurement range was achieved by the T-type gauge (0.01∼760 Torr or more) compared with the L-type one (0.01∼100 Torr). Besides, the device also showed high stability with a small variation value (3.8‰ @ 1.3e-4 Torr).
KW - CMOS compatible
KW - FEM
KW - Performance Enhancement
KW - Pirani gauge
UR - http://www.scopus.com/inward/record.url?scp=85149844459&partnerID=8YFLogxK
U2 - 10.1109/MEMS49605.2023.10052309
DO - 10.1109/MEMS49605.2023.10052309
M3 - Conference contribution
AN - SCOPUS:85149844459
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 752
EP - 755
BT - 2023 IEEE 36th International Conference on Micro Electro Mechanical Systems, MEMS 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 36th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2023
Y2 - 15 January 2023 through 19 January 2023
ER -