@inproceedings{2b03162a66eb47b6a4c7ea9f32255677,
title = "A Capacitor-less LDO with Nested Miller Compensation and Bulk-Driven Techniques in 90nm CMOS",
abstract = "This paper presents an output-capacitor-less low-dropout regulator (LDO) with nested miller compensation and bulk-driven techniques. The proposed LDO has been fabricated in TSMC 90 nm CMOS technology. The nominal supply voltage of the LDO is 1.8 V and the output voltage is 1.2 V. Bulk-driven technique is used to improve the power supply rejection Ratio (PSRR), which are -64 dB at 100 kHz and -24 dB at 25 GHz. It occupies 160 μm × 85 μm of chip area. Measurement results show the drop-out voltage is 200 mV at the maximum output current of 40 mA.",
keywords = "bulk-driven PMOS, low drop-out regulator (LDO), push-pull buffer",
author = "Ruitong Zhang and Zicheng Liu and Xinghua Wang",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021 ; Conference date: 26-05-2021 Through 28-05-2021",
year = "2021",
month = may,
day = "26",
doi = "10.1109/ICCSS51193.2021.9464211",
language = "English",
series = "2021 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "51--55",
booktitle = "2021 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021",
address = "United States",
}