A Capacitor-less LDO with Nested Miller Compensation and Bulk-Driven Techniques in 90nm CMOS

Ruitong Zhang; Zicheng Liu; Xinghua Wang

doi:10.1109/ICCSS51193.2021.9464211

A Capacitor-less LDO with Nested Miller Compensation and Bulk-Driven Techniques in 90nm CMOS

Ruitong Zhang, Zicheng Liu, Xinghua Wang

School of Integrated Circuits and Electronics

Beijing Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

This paper presents an output-capacitor-less low-dropout regulator (LDO) with nested miller compensation and bulk-driven techniques. The proposed LDO has been fabricated in TSMC 90 nm CMOS technology. The nominal supply voltage of the LDO is 1.8 V and the output voltage is 1.2 V. Bulk-driven technique is used to improve the power supply rejection Ratio (PSRR), which are -64 dB at 100 kHz and -24 dB at 25 GHz. It occupies 160 μm × 85 μm of chip area. Measurement results show the drop-out voltage is 200 mV at the maximum output current of 40 mA.

Original language	English
Title of host publication	2021 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	51-55
Number of pages	5
ISBN (Electronic)	9781728167527
DOIs	https://doi.org/10.1109/ICCSS51193.2021.9464211
Publication status	Published - 26 May 2021
Event	4th International Conference on Circuits, Systems and Simulation, ICCSS 2021 - Virtual, Kuala Lumpur, Malaysia Duration: 26 May 2021 → 28 May 2021

Publication series

Name	2021 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021

Conference

Conference	4th International Conference on Circuits, Systems and Simulation, ICCSS 2021
Country/Territory	Malaysia
City	Virtual, Kuala Lumpur
Period	26/05/21 → 28/05/21

Keywords

bulk-driven PMOS
low drop-out regulator (LDO)
push-pull buffer

Access to Document

10.1109/ICCSS51193.2021.9464211

Cite this

Zhang, R., Liu, Z., & Wang, X. (2021). A Capacitor-less LDO with Nested Miller Compensation and Bulk-Driven Techniques in 90nm CMOS. In 2021 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021 (pp. 51-55). Article 9464211 (2021 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICCSS51193.2021.9464211

Zhang, Ruitong ; Liu, Zicheng ; Wang, Xinghua. / A Capacitor-less LDO with Nested Miller Compensation and Bulk-Driven Techniques in 90nm CMOS. 2021 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 51-55 (2021 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021).

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title = "A Capacitor-less LDO with Nested Miller Compensation and Bulk-Driven Techniques in 90nm CMOS",

abstract = "This paper presents an output-capacitor-less low-dropout regulator (LDO) with nested miller compensation and bulk-driven techniques. The proposed LDO has been fabricated in TSMC 90 nm CMOS technology. The nominal supply voltage of the LDO is 1.8 V and the output voltage is 1.2 V. Bulk-driven technique is used to improve the power supply rejection Ratio (PSRR), which are -64 dB at 100 kHz and -24 dB at 25 GHz. It occupies 160 μm × 85 μm of chip area. Measurement results show the drop-out voltage is 200 mV at the maximum output current of 40 mA.",

keywords = "bulk-driven PMOS, low drop-out regulator (LDO), push-pull buffer",

author = "Ruitong Zhang and Zicheng Liu and Xinghua Wang",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021 ; Conference date: 26-05-2021 Through 28-05-2021",

year = "2021",

month = may,

day = "26",

doi = "10.1109/ICCSS51193.2021.9464211",

language = "English",

series = "2021 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "51--55",

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address = "United States",

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Zhang, R, Liu, Z & Wang, X 2021, A Capacitor-less LDO with Nested Miller Compensation and Bulk-Driven Techniques in 90nm CMOS. in 2021 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021., 9464211, 2021 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021, Institute of Electrical and Electronics Engineers Inc., pp. 51-55, 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021, Virtual, Kuala Lumpur, Malaysia, 26/05/21. https://doi.org/10.1109/ICCSS51193.2021.9464211

A Capacitor-less LDO with Nested Miller Compensation and Bulk-Driven Techniques in 90nm CMOS. / Zhang, Ruitong; Liu, Zicheng; Wang, Xinghua.
2021 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 51-55 9464211 (2021 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A Capacitor-less LDO with Nested Miller Compensation and Bulk-Driven Techniques in 90nm CMOS

AU - Zhang, Ruitong

AU - Liu, Zicheng

AU - Wang, Xinghua

PY - 2021/5/26

Y1 - 2021/5/26

N2 - This paper presents an output-capacitor-less low-dropout regulator (LDO) with nested miller compensation and bulk-driven techniques. The proposed LDO has been fabricated in TSMC 90 nm CMOS technology. The nominal supply voltage of the LDO is 1.8 V and the output voltage is 1.2 V. Bulk-driven technique is used to improve the power supply rejection Ratio (PSRR), which are -64 dB at 100 kHz and -24 dB at 25 GHz. It occupies 160 μm × 85 μm of chip area. Measurement results show the drop-out voltage is 200 mV at the maximum output current of 40 mA.

AB - This paper presents an output-capacitor-less low-dropout regulator (LDO) with nested miller compensation and bulk-driven techniques. The proposed LDO has been fabricated in TSMC 90 nm CMOS technology. The nominal supply voltage of the LDO is 1.8 V and the output voltage is 1.2 V. Bulk-driven technique is used to improve the power supply rejection Ratio (PSRR), which are -64 dB at 100 kHz and -24 dB at 25 GHz. It occupies 160 μm × 85 μm of chip area. Measurement results show the drop-out voltage is 200 mV at the maximum output current of 40 mA.

KW - bulk-driven PMOS

KW - low drop-out regulator (LDO)

KW - push-pull buffer

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DO - 10.1109/ICCSS51193.2021.9464211

M3 - Conference contribution

AN - SCOPUS:85113678637

T3 - 2021 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021

SP - 51

EP - 55

BT - 2021 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021

Y2 - 26 May 2021 through 28 May 2021

ER -

Zhang R, Liu Z, Wang X. A Capacitor-less LDO with Nested Miller Compensation and Bulk-Driven Techniques in 90nm CMOS. In 2021 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 51-55. 9464211. (2021 4th International Conference on Circuits, Systems and Simulation, ICCSS 2021). doi: 10.1109/ICCSS51193.2021.9464211

A Capacitor-less LDO with Nested Miller Compensation and Bulk-Driven Techniques in 90nm CMOS

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