A cantilever-structured AlkGaN/GaN HEMT for building a strain-controlled platform

Xiao Cui; Qilin Hua; Keyu Ji; Bingjun Wang; Shuo Zhang; Weiguo Hu

doi:10.1109/EDTM50988.2021.9421045

A cantilever-structured AlkGaN/GaN HEMT for building a strain-controlled platform

Xiao Cui, Qilin Hua, Keyu Ji, Bingjun Wang, Shuo Zhang, Weiguo Hu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We demonstrate the AlGaN/GaN high electron mobility transistor (HEMT) featured with a cantilever structure. The output performances of the HEMT before and after the cantilever fabrication process are investigated. By interacting with the cantilever, the output characteristics can be directly modulated by external strain. Additionally, the output current density shows an approximately linear relation with applied strain. The cantilever-structured AlGaN/GaN HEMT is very suitable to build a strain-controlled platform for artificial intelligence systems.

Original language	English
Title of host publication	2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728181769
DOIs	https://doi.org/10.1109/EDTM50988.2021.9421045
Publication status	Published - 8 Apr 2021
Externally published	Yes
Event	5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 - Chengdu, China Duration: 8 Apr 2021 → 11 Apr 2021

Publication series

Name	2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

Conference

Conference	5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
Country/Territory	China
City	Chengdu
Period	8/04/21 → 11/04/21

Keywords

GaN
HEMT
cantilever structure

Access to Document

10.1109/EDTM50988.2021.9421045

Cite this

Cui, X., Hua, Q., Ji, K., Wang, B., Zhang, S., & Hu, W. (2021). A cantilever-structured AlkGaN/GaN HEMT for building a strain-controlled platform. In 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 Article 9421045 (2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM50988.2021.9421045

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title = "A cantilever-structured AlkGaN/GaN HEMT for building a strain-controlled platform",

abstract = "We demonstrate the AlGaN/GaN high electron mobility transistor (HEMT) featured with a cantilever structure. The output performances of the HEMT before and after the cantilever fabrication process are investigated. By interacting with the cantilever, the output characteristics can be directly modulated by external strain. Additionally, the output current density shows an approximately linear relation with applied strain. The cantilever-structured AlGaN/GaN HEMT is very suitable to build a strain-controlled platform for artificial intelligence systems.",

keywords = "GaN, HEMT, cantilever structure",

author = "Xiao Cui and Qilin Hua and Keyu Ji and Bingjun Wang and Shuo Zhang and Weiguo Hu",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 ; Conference date: 08-04-2021 Through 11-04-2021",

year = "2021",

month = apr,

day = "8",

doi = "10.1109/EDTM50988.2021.9421045",

language = "English",

series = "2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

Cui, X, Hua, Q, Ji, K, Wang, B, Zhang, S & Hu, W 2021, A cantilever-structured AlkGaN/GaN HEMT for building a strain-controlled platform. in 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021., 9421045, 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, Institute of Electrical and Electronics Engineers Inc., 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, Chengdu, China, 8/04/21. https://doi.org/10.1109/EDTM50988.2021.9421045

A cantilever-structured AlkGaN/GaN HEMT for building a strain-controlled platform. / Cui, Xiao; Hua, Qilin; Ji, Keyu et al.
2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. Institute of Electrical and Electronics Engineers Inc., 2021. 9421045 (2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A cantilever-structured AlkGaN/GaN HEMT for building a strain-controlled platform

AU - Cui, Xiao

AU - Hua, Qilin

AU - Ji, Keyu

AU - Wang, Bingjun

AU - Zhang, Shuo

AU - Hu, Weiguo

PY - 2021/4/8

Y1 - 2021/4/8

N2 - We demonstrate the AlGaN/GaN high electron mobility transistor (HEMT) featured with a cantilever structure. The output performances of the HEMT before and after the cantilever fabrication process are investigated. By interacting with the cantilever, the output characteristics can be directly modulated by external strain. Additionally, the output current density shows an approximately linear relation with applied strain. The cantilever-structured AlGaN/GaN HEMT is very suitable to build a strain-controlled platform for artificial intelligence systems.

AB - We demonstrate the AlGaN/GaN high electron mobility transistor (HEMT) featured with a cantilever structure. The output performances of the HEMT before and after the cantilever fabrication process are investigated. By interacting with the cantilever, the output characteristics can be directly modulated by external strain. Additionally, the output current density shows an approximately linear relation with applied strain. The cantilever-structured AlGaN/GaN HEMT is very suitable to build a strain-controlled platform for artificial intelligence systems.

KW - GaN

KW - HEMT

KW - cantilever structure

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U2 - 10.1109/EDTM50988.2021.9421045

DO - 10.1109/EDTM50988.2021.9421045

M3 - Conference contribution

AN - SCOPUS:85106537075

T3 - 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

BT - 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

Y2 - 8 April 2021 through 11 April 2021

ER -

Cui X, Hua Q, Ji K, Wang B, Zhang S, Hu W. A cantilever-structured AlkGaN/GaN HEMT for building a strain-controlled platform. In 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. Institute of Electrical and Electronics Engineers Inc. 2021. 9421045. (2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021). doi: 10.1109/EDTM50988.2021.9421045

A cantilever-structured AlkGaN/GaN HEMT for building a strain-controlled platform

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Keywords

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