TY - GEN
T1 - A Bidirectional CMOS MEMS Thermal Wall Shear Stress Sensor with Improved Sensitivity and Low Power Consumption
AU - Wang, Xiaoyi
AU - Guo, Yifei
AU - Zhao, Xu
AU - Xu, Wei
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/1/25
Y1 - 2021/1/25
N2 - For the first time, we reported a highly sensitive, low power consumption and bidirectional thermal wall shear stress sensor using 0.18 μm 1P6M CMOS MEMS technology. To fulfill the bidirectional sensing, a sensor design of a calorimetric structure is adopted. Benefited from the 0.18 μm 1P6M CMOS technology, to enhance the sensitivity and reduce the power consumption, the sensor film thickness is reduced from 8.56 μm to 2.7 μm utilizing a novel film thinning method (metal 2 layer as the hard mask). Furthermore, the p+ silicide polysilicon is adopted as the sensing material due to its highest temperature coefficient of resistance (TCR) of 3360 ppm/°C. Finally, the fabricated device is tested with high sensitivity of 1.759 V/Pa and bidirectional measurement range of -12 Pa to 20 Pa, even under the low power consumption of 1 mW, demonstrating its promising application as a wall shear stress sensing node and a potential candidate for the Internet of Things.
AB - For the first time, we reported a highly sensitive, low power consumption and bidirectional thermal wall shear stress sensor using 0.18 μm 1P6M CMOS MEMS technology. To fulfill the bidirectional sensing, a sensor design of a calorimetric structure is adopted. Benefited from the 0.18 μm 1P6M CMOS technology, to enhance the sensitivity and reduce the power consumption, the sensor film thickness is reduced from 8.56 μm to 2.7 μm utilizing a novel film thinning method (metal 2 layer as the hard mask). Furthermore, the p+ silicide polysilicon is adopted as the sensing material due to its highest temperature coefficient of resistance (TCR) of 3360 ppm/°C. Finally, the fabricated device is tested with high sensitivity of 1.759 V/Pa and bidirectional measurement range of -12 Pa to 20 Pa, even under the low power consumption of 1 mW, demonstrating its promising application as a wall shear stress sensing node and a potential candidate for the Internet of Things.
KW - CMOS MEMS
KW - Wall shear stress sensor
KW - bidirectional sensing
KW - film thinning
KW - high sensitivity
UR - http://www.scopus.com/inward/record.url?scp=85103448520&partnerID=8YFLogxK
U2 - 10.1109/MEMS51782.2021.9375363
DO - 10.1109/MEMS51782.2021.9375363
M3 - Conference contribution
AN - SCOPUS:85103448520
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 131
EP - 134
BT - 34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021
Y2 - 25 January 2021 through 29 January 2021
ER -