Abstract
This paper presents a differential 19.6–39.4 GHz broadband low-noise amplifier (LNA) in 65-nm CMOS technology. The LNA consists of two cascode stage and one common-source stage. To achieve a wide bandwidth and low average noise figure, inter-stage peak-gain distribution technique and transformer-based triple-coupled technique are developed. Besides, a new compact T-coil-based network is proposed to neutralize the parasitic capacitors and enlarge the gain. The measure results show that the 3-dB bandwidth is from 19.6 to 39.4 GHz, the maximum gain is 23.5 dB, and the noise figure (NF) is from 3.7 to 5.8 dB. The dc power comsumption is 46 mW with 1V supply voltage. The input P1dB is −17 dBm at 30 GHz.
Original language | English |
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Article number | 1833 |
Journal | Electronics (Switzerland) |
Volume | 11 |
Issue number | 12 |
DOIs | |
Publication status | Published - 1 Jun 2022 |
Keywords
- 5G millimeter-wave communication
- CMOS
- T-coil network
- broadband
- low noise amplifier
- magnetically coupled resonators
- triple-coupled technique