A 19.6–39.4 GHz Broadband Low Noise Amplifier Based on Triple-Coupled Technique and T-Coil Network in 65-nm CMOS

Jiayue Wan, Xiao Li, Fang Han, Quanwen Qi, Xuzhi Liu, Zhiming Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

This paper presents a differential 19.6–39.4 GHz broadband low-noise amplifier (LNA) in 65-nm CMOS technology. The LNA consists of two cascode stage and one common-source stage. To achieve a wide bandwidth and low average noise figure, inter-stage peak-gain distribution technique and transformer-based triple-coupled technique are developed. Besides, a new compact T-coil-based network is proposed to neutralize the parasitic capacitors and enlarge the gain. The measure results show that the 3-dB bandwidth is from 19.6 to 39.4 GHz, the maximum gain is 23.5 dB, and the noise figure (NF) is from 3.7 to 5.8 dB. The dc power comsumption is 46 mW with 1V supply voltage. The input P1dB is −17 dBm at 30 GHz.

Original languageEnglish
Article number1833
JournalElectronics (Switzerland)
Volume11
Issue number12
DOIs
Publication statusPublished - 1 Jun 2022

Keywords

  • 5G millimeter-wave communication
  • CMOS
  • T-coil network
  • broadband
  • low noise amplifier
  • magnetically coupled resonators
  • triple-coupled technique

Fingerprint

Dive into the research topics of 'A 19.6–39.4 GHz Broadband Low Noise Amplifier Based on Triple-Coupled Technique and T-Coil Network in 65-nm CMOS'. Together they form a unique fingerprint.

Cite this