A 144-fJ/Bit Reliable and Compact TRNG Based on the Diffusive Resistance of 3-D Resistive Random Access Memory

Xiaoran Li; Yiming Wang; Yiming Yang; Shidong Lv; Qing Luo; Xinghua Wang; Xiaoxin Xu; Dengyun Lei; Feng Zhang

doi:10.1109/TED.2023.3288839

A 144-fJ/Bit Reliable and Compact TRNG Based on the Diffusive Resistance of 3-D Resistive Random Access Memory

Xiaoran Li^*, Yiming Wang, Yiming Yang, Shidong Lv, Qing Luo, Xinghua Wang^*, Xiaoxin Xu^*, Dengyun Lei^*, Feng Zhang^*

^*Corresponding author for this work

School of Integrated Circuits and Electronics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this work, we harnessed the diffusiveness of the resistant states in 3-D resistive random access memory (RRAM) array and implemented a true random number generator (TRNG). The fluctuation of the resistance states serves as the random source, which is then amplified by peripheral ring oscillator (RO) circuits. The peripheral circuits are fabricated in a 55-nm CMOS process. Measurement results show that the TRNG supports a maximum throughput of 1 Gb/s and passes the NIST test across -40 °C to 125 °C. The RRAM cells enjoy good robustness under high temperature, as the baking experiment shows. The TRNG obviates the need for calibration circuits and requires no startup circuits. The proposed work harvests the fluctuation of analog resistance of RRAM cells, enriching the TRNG family aimed for Internet of Things (IoT) application.

Original language	English
Pages (from-to)	4139-4144
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	70
Issue number	8
DOIs	https://doi.org/10.1109/TED.2023.3288839
Publication status	Published - 1 Aug 2023

Keywords

3-D resistive random access memory (RRAM)
Internet of Things (IoT) applications
true random number generator (TRNG)

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10.1109/TED.2023.3288839

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@article{b601078fe1684744bb4ecf4ae9c3fd5d,

title = "A 144-fJ/Bit Reliable and Compact TRNG Based on the Diffusive Resistance of 3-D Resistive Random Access Memory",

abstract = "In this work, we harnessed the diffusiveness of the resistant states in 3-D resistive random access memory (RRAM) array and implemented a true random number generator (TRNG). The fluctuation of the resistance states serves as the random source, which is then amplified by peripheral ring oscillator (RO) circuits. The peripheral circuits are fabricated in a 55-nm CMOS process. Measurement results show that the TRNG supports a maximum throughput of 1 Gb/s and passes the NIST test across -40 °C to 125 °C. The RRAM cells enjoy good robustness under high temperature, as the baking experiment shows. The TRNG obviates the need for calibration circuits and requires no startup circuits. The proposed work harvests the fluctuation of analog resistance of RRAM cells, enriching the TRNG family aimed for Internet of Things (IoT) application.",

keywords = "3-D resistive random access memory (RRAM), Internet of Things (IoT) applications, true random number generator (TRNG)",

author = "Xiaoran Li and Yiming Wang and Yiming Yang and Shidong Lv and Qing Luo and Xinghua Wang and Xiaoxin Xu and Dengyun Lei and Feng Zhang",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2023",

month = aug,

day = "1",

doi = "10.1109/TED.2023.3288839",

language = "English",

volume = "70",

pages = "4139--4144",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - A 144-fJ/Bit Reliable and Compact TRNG Based on the Diffusive Resistance of 3-D Resistive Random Access Memory

AU - Li, Xiaoran

AU - Wang, Yiming

AU - Yang, Yiming

AU - Lv, Shidong

AU - Luo, Qing

AU - Wang, Xinghua

AU - Xu, Xiaoxin

AU - Lei, Dengyun

AU - Zhang, Feng

PY - 2023/8/1

Y1 - 2023/8/1

N2 - In this work, we harnessed the diffusiveness of the resistant states in 3-D resistive random access memory (RRAM) array and implemented a true random number generator (TRNG). The fluctuation of the resistance states serves as the random source, which is then amplified by peripheral ring oscillator (RO) circuits. The peripheral circuits are fabricated in a 55-nm CMOS process. Measurement results show that the TRNG supports a maximum throughput of 1 Gb/s and passes the NIST test across -40 °C to 125 °C. The RRAM cells enjoy good robustness under high temperature, as the baking experiment shows. The TRNG obviates the need for calibration circuits and requires no startup circuits. The proposed work harvests the fluctuation of analog resistance of RRAM cells, enriching the TRNG family aimed for Internet of Things (IoT) application.

AB - In this work, we harnessed the diffusiveness of the resistant states in 3-D resistive random access memory (RRAM) array and implemented a true random number generator (TRNG). The fluctuation of the resistance states serves as the random source, which is then amplified by peripheral ring oscillator (RO) circuits. The peripheral circuits are fabricated in a 55-nm CMOS process. Measurement results show that the TRNG supports a maximum throughput of 1 Gb/s and passes the NIST test across -40 °C to 125 °C. The RRAM cells enjoy good robustness under high temperature, as the baking experiment shows. The TRNG obviates the need for calibration circuits and requires no startup circuits. The proposed work harvests the fluctuation of analog resistance of RRAM cells, enriching the TRNG family aimed for Internet of Things (IoT) application.

KW - 3-D resistive random access memory (RRAM)

KW - Internet of Things (IoT) applications

KW - true random number generator (TRNG)

UR - http://www.scopus.com/inward/record.url?scp=85164383170&partnerID=8YFLogxK

U2 - 10.1109/TED.2023.3288839

DO - 10.1109/TED.2023.3288839

M3 - Article

AN - SCOPUS:85164383170

SN - 0018-9383

VL - 70

SP - 4139

EP - 4144

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

ER -

A 144-fJ/Bit Reliable and Compact TRNG Based on the Diffusive Resistance of 3-D Resistive Random Access Memory

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Keywords

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