Abstract
A 1.25 GHz two-stage band-pass filter fabricated in TSMC 90 nm CMOS process is presented. The Q-compensate technique is used for better filtering performance, and a notch circuit is added to achieve the desired image rejection of 40 dB. Measured gain of this filter is 16.3 dB at 1.25 GHz with the pass band width of 20 MHz. The out-of-band suppression at 100 MHz offset and image rejection at 1.1 GHz are 26 dB and 42 dB, respectively. The power consumption is 22mA from a 1.2 V supply.
| Original language | English |
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| Title of host publication | 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781479942084 |
| DOIs | |
| Publication status | Published - 23 Jun 2015 |
| Event | 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015 - Taipei, Taiwan, Province of China Duration: 4 May 2015 → 6 May 2015 |
Publication series
| Name | 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015 |
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Conference
| Conference | 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015 |
|---|---|
| Country/Territory | Taiwan, Province of China |
| City | Taipei |
| Period | 4/05/15 → 6/05/15 |
Keywords
- CMOS
- Q-enhanced
- band-pass filter
- image rejection
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Gao, P., Cui, W., & Gui, X. (2015). A 1.25 GHz Q-enhanced filter with image rejection. In 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015 Article 7132017 (4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2015.7132017