@inproceedings{b4921f0032c74fd8b42fd46ac805edea,
title = "A 120-166 GHz InP HBT Frequency Doubler with Conversion Gain of 4.4 dB",
abstract = "This letter presents a 120-166GHz active frequency doubler in a 0.5-\mu \mathrm{m} InP heterojunction bipolar transistor (HBT) technology (\mathrm{f}{\mathrm{T}}/\mathrm{f}{\max}=350 GHz /532 GHz) with a 3-metal layer, thin-film microstrip wiring environment. A single-ended topology is employed to realize a fully integrated wideband frequency doubler. The doubler core uses common-emitter transistors. The simulated results show that the proposed doubler achieves a peak conversion gain of 4.4 dB at 150 GHz with 46-GHz 3-dB gain bandwidth, a typical fundamental rejection of 27 dB, the maximum output power of-0.6 dBm and a peak power efficiency of 2.1% when dc power is 41.2mW.",
keywords = "Frequency doubler, InP, heterojunction bipolar transistor (HBT), submillimeter-wave integrated circuits",
author = "Qin Yu and Limin Sun and Weihua Yu and Bowu Wang and Ming Zhou",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2021 ; Conference date: 15-11-2021 Through 17-11-2021",
year = "2021",
doi = "10.1109/IMWS-AMP53428.2021.9643995",
language = "English",
series = "2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "293--295",
booktitle = "2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2021",
address = "United States",
}