TY - GEN
T1 - 32.8 A 27.8-to-38.7GHz Load-Modulated Balanced Power Amplifier with Scalable 7-to-1 Load-Modulated Power-Combine Network Achieving 27.2dBm Output Power and 28.8%/23.2%/16.3%/11.9% Peak/6/9/12dB Back-Off Efficiency
AU - Zhu, Wei
AU - Ying, Jiazhi
AU - Chen, Long
AU - Zhang, Jian
AU - Lv, Guanshen
AU - Yi, Xiangjie
AU - Zhao, Zhiqiang
AU - Wang, Zunxiang
AU - Wang, Yan
AU - Chen, Wenhua
AU - Sun, Houjun
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - The increasing global demand for multi-Gb/s data-rates has accelerated the rapid development and standardization of the 5G technology, particularly in the mm-wave bands [1-11]. With 5G, there is a significant anticipation for the widespread utilization of high-speed and spectrally efficient modulation schemes. As a result, the importance of both modulation efficiency and high average output power (Pout) of power amplifiers (PAs) is increasing. This becomes especially crucial in User-Equipment (UE) devices, whose compact form factor imposes constraints on the integration of antenna-array elements. Furthermore, the advancement towards low-cost and multifunctional architectures [1-3] necessitates future mm-wave front-ends to enable multiband and multimode operations across the 28-to-40GHz band to cover the 5G n257 and n260 frequency ranges. As a result, there is a strong demand for silicon-based broadband PA architectures with active load modulation and high Pout to meet the specific requirements of 5G.
AB - The increasing global demand for multi-Gb/s data-rates has accelerated the rapid development and standardization of the 5G technology, particularly in the mm-wave bands [1-11]. With 5G, there is a significant anticipation for the widespread utilization of high-speed and spectrally efficient modulation schemes. As a result, the importance of both modulation efficiency and high average output power (Pout) of power amplifiers (PAs) is increasing. This becomes especially crucial in User-Equipment (UE) devices, whose compact form factor imposes constraints on the integration of antenna-array elements. Furthermore, the advancement towards low-cost and multifunctional architectures [1-3] necessitates future mm-wave front-ends to enable multiband and multimode operations across the 28-to-40GHz band to cover the 5G n257 and n260 frequency ranges. As a result, there is a strong demand for silicon-based broadband PA architectures with active load modulation and high Pout to meet the specific requirements of 5G.
UR - http://www.scopus.com/inward/record.url?scp=85188087297&partnerID=8YFLogxK
U2 - 10.1109/ISSCC49657.2024.10454540
DO - 10.1109/ISSCC49657.2024.10454540
M3 - Conference contribution
AN - SCOPUS:85188087297
T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
SP - 534
EP - 536
BT - 2024 IEEE International Solid-State Circuits Conference, ISSCC 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2024 IEEE International Solid-State Circuits Conference, ISSCC 2024
Y2 - 18 February 2024 through 22 February 2024
ER -