2D simulations of non-local transport effects in deep-submicrometer HEMTs

Zhiming Wang; Xiaobin Luo; Weihua Yu; Xin Lv

doi:10.1109/MMWCST.2013.6814553

2D simulations of non-local transport effects in deep-submicrometer HEMTs

Zhiming Wang, Xiaobin Luo, Weihua Yu, Xin Lv

School of Integrated Circuits and Electronics

Beijing Institute of Technology

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper, conventional drift-diffusion model was introduced and the disadvantage was analysed when the device dimensions shrink to deep-submicrometer regime, non-local effects are expected to become more prominent. To investigate non-local transport effects in InAlAs/InGaAs HEMT's, energy-balance model was taken into account. Velocity overshoot caused by non-equivalence of electron momentum and energy relaxation times was analysed and is responsible for the increasing drain current and transconductance.

Original language	English
Pages	468-470
Number of pages	3
DOIs	https://doi.org/10.1109/MMWCST.2013.6814553
Publication status	Published - 2013
Event	2013 International Workshop on Microwave and Millimeter Wave Circuits and System Technology, MMWCST 2013 - Emeishan, Sichuan, China Duration: 24 Oct 2013 → 25 Oct 2013

Conference

Conference	2013 International Workshop on Microwave and Millimeter Wave Circuits and System Technology, MMWCST 2013
Country/Territory	China
City	Emeishan, Sichuan
Period	24/10/13 → 25/10/13

Keywords

HEMTs
Non-local transport effects
Velocity overshoot
energy relaxation times
simulation

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10.1109/MMWCST.2013.6814553

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author = "Zhiming Wang and Xiaobin Luo and Weihua Yu and Xin Lv",

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doi = "10.1109/MMWCST.2013.6814553",

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AU - Wang, Zhiming

AU - Luo, Xiaobin

AU - Yu, Weihua

AU - Lv, Xin

PY - 2013

Y1 - 2013

N2 - In this paper, conventional drift-diffusion model was introduced and the disadvantage was analysed when the device dimensions shrink to deep-submicrometer regime, non-local effects are expected to become more prominent. To investigate non-local transport effects in InAlAs/InGaAs HEMT's, energy-balance model was taken into account. Velocity overshoot caused by non-equivalence of electron momentum and energy relaxation times was analysed and is responsible for the increasing drain current and transconductance.

AB - In this paper, conventional drift-diffusion model was introduced and the disadvantage was analysed when the device dimensions shrink to deep-submicrometer regime, non-local effects are expected to become more prominent. To investigate non-local transport effects in InAlAs/InGaAs HEMT's, energy-balance model was taken into account. Velocity overshoot caused by non-equivalence of electron momentum and energy relaxation times was analysed and is responsible for the increasing drain current and transconductance.

KW - HEMTs

KW - Non-local transport effects

KW - Velocity overshoot

KW - energy relaxation times

KW - simulation

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U2 - 10.1109/MMWCST.2013.6814553

DO - 10.1109/MMWCST.2013.6814553

M3 - Paper

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EP - 470

T2 - 2013 International Workshop on Microwave and Millimeter Wave Circuits and System Technology, MMWCST 2013

Y2 - 24 October 2013 through 25 October 2013

ER -

2D simulations of non-local transport effects in deep-submicrometer HEMTs

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Keywords

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