170 GHz Frequency Doubler Based on Schottky Diode

Wei He; Xinyang Wang; Yuxuan Liu; Yu Cao; Wenqin Kuai; Weihua Yu

doi:10.1109/IMWS-AMP57814.2023.10381391

170 GHz Frequency Doubler Based on Schottky Diode

Wei He, Xinyang Wang, Yuxuan Liu, Yu Cao, Wenqin Kuai, Weihua Yu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, a 170 GHz hybrid integrated terahertz frequency doubler based on GaAs schottky diodes is designed. The frequency doubler based on 50 μm quartz substrate microstrip circuit, the Schottky diode was flip-chiped on the thick quartz. The doubler is simulated by 3-D electromagnetic simulation and nonlinear harmonic balance method, and the 170 GHz frequency doubler is fabricated and tested, under the condition of self-biased, when the input power is 70 mW, the maximum measured efficiency of the 170 GHz frequency doubler is 21.3%@168 GHz and the corresponding maximum output power is 14.9 mW. When the input power is 120 mW, the peak efficiency of the frequency double is 27.5%@168 GHz, and the biggest output power is 33 m W.

Original language	English
Title of host publication	IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350308761
DOIs	https://doi.org/10.1109/IMWS-AMP57814.2023.10381391
Publication status	Published - 2023
Externally published	Yes
Event	2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Chengdu, China Duration: 12 Nov 2023 → 15 Nov 2023

Publication series

Name	IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings

Conference

Conference	2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023
Country/Territory	China
City	Chengdu
Period	12/11/23 → 15/11/23

Keywords

Frequency doubler
Schottky diode
Terahertz

Access to Document

10.1109/IMWS-AMP57814.2023.10381391

Cite this

He, W., Wang, X., Liu, Y., Cao, Y., Kuai, W., & Yu, W. (2023). 170 GHz Frequency Doubler Based on Schottky Diode. In IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings (IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMWS-AMP57814.2023.10381391

He, Wei ; Wang, Xinyang ; Liu, Yuxuan et al. / 170 GHz Frequency Doubler Based on Schottky Diode. IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings).

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title = "170 GHz Frequency Doubler Based on Schottky Diode",

abstract = "In this paper, a 170 GHz hybrid integrated terahertz frequency doubler based on GaAs schottky diodes is designed. The frequency doubler based on 50 μm quartz substrate microstrip circuit, the Schottky diode was flip-chiped on the thick quartz. The doubler is simulated by 3-D electromagnetic simulation and nonlinear harmonic balance method, and the 170 GHz frequency doubler is fabricated and tested, under the condition of self-biased, when the input power is 70 mW, the maximum measured efficiency of the 170 GHz frequency doubler is 21.3%@168 GHz and the corresponding maximum output power is 14.9 mW. When the input power is 120 mW, the peak efficiency of the frequency double is 27.5%@168 GHz, and the biggest output power is 33 m W.",

keywords = "Frequency doubler, Schottky diode, Terahertz",

author = "Wei He and Xinyang Wang and Yuxuan Liu and Yu Cao and Wenqin Kuai and Weihua Yu",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 ; Conference date: 12-11-2023 Through 15-11-2023",

year = "2023",

doi = "10.1109/IMWS-AMP57814.2023.10381391",

language = "English",

series = "IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings",

address = "United States",

}

He, W, Wang, X, Liu, Y, Cao, Y, Kuai, W & Yu, W 2023, 170 GHz Frequency Doubler Based on Schottky Diode. in IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings. IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023, Chengdu, China, 12/11/23. https://doi.org/10.1109/IMWS-AMP57814.2023.10381391

170 GHz Frequency Doubler Based on Schottky Diode. / He, Wei; Wang, Xinyang; Liu, Yuxuan et al.
IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - 170 GHz Frequency Doubler Based on Schottky Diode

AU - He, Wei

AU - Wang, Xinyang

AU - Liu, Yuxuan

AU - Cao, Yu

AU - Kuai, Wenqin

AU - Yu, Weihua

PY - 2023

Y1 - 2023

N2 - In this paper, a 170 GHz hybrid integrated terahertz frequency doubler based on GaAs schottky diodes is designed. The frequency doubler based on 50 μm quartz substrate microstrip circuit, the Schottky diode was flip-chiped on the thick quartz. The doubler is simulated by 3-D electromagnetic simulation and nonlinear harmonic balance method, and the 170 GHz frequency doubler is fabricated and tested, under the condition of self-biased, when the input power is 70 mW, the maximum measured efficiency of the 170 GHz frequency doubler is 21.3%@168 GHz and the corresponding maximum output power is 14.9 mW. When the input power is 120 mW, the peak efficiency of the frequency double is 27.5%@168 GHz, and the biggest output power is 33 m W.

AB - In this paper, a 170 GHz hybrid integrated terahertz frequency doubler based on GaAs schottky diodes is designed. The frequency doubler based on 50 μm quartz substrate microstrip circuit, the Schottky diode was flip-chiped on the thick quartz. The doubler is simulated by 3-D electromagnetic simulation and nonlinear harmonic balance method, and the 170 GHz frequency doubler is fabricated and tested, under the condition of self-biased, when the input power is 70 mW, the maximum measured efficiency of the 170 GHz frequency doubler is 21.3%@168 GHz and the corresponding maximum output power is 14.9 mW. When the input power is 120 mW, the peak efficiency of the frequency double is 27.5%@168 GHz, and the biggest output power is 33 m W.

KW - Frequency doubler

KW - Schottky diode

KW - Terahertz

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U2 - 10.1109/IMWS-AMP57814.2023.10381391

DO - 10.1109/IMWS-AMP57814.2023.10381391

M3 - Conference contribution

AN - SCOPUS:85183610028

T3 - IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings

BT - IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023

Y2 - 12 November 2023 through 15 November 2023

ER -

He W, Wang X, Liu Y, Cao Y, Kuai W, Yu W. 170 GHz Frequency Doubler Based on Schottky Diode. In IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. (IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings). doi: 10.1109/IMWS-AMP57814.2023.10381391

170 GHz Frequency Doubler Based on Schottky Diode

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