1645-nm single-frequency, injection-seeded Q-switched Er:YAG master oscillator and power amplifier

Shuo Wang, Chunqing Gao*, Yang Shi, Rui Song, Quanxin Na, Mingwei Gao, Qing Wang

*Corresponding author for this work

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Abstract

A 1645-nm injection-seeded Q-switched Er:YAG master oscillator and power amplifier system is reported. The master oscillator generates single-frequency pulse energy of 11.10 mJ with a pulse width of 188.8 ns at 200 Hz. An Er:YAG monolithic nonplanar ring oscillator is employed as a seed laser. The output pulse from the master oscillator is amplified to 14.33-mJ pulse energy through an Er:YAG amplifier, with a pulse width of 183.3 ns. The M2-factors behind the amplifier are 1.14 and 1.23 in x- and y-directions, respectively. The full width at half maximum of the fast Fourier transformation spectrum of the heterodyne beating signal is 2.84 MHz.

Original languageEnglish
Article number026120
JournalOptical Engineering
Volume57
Issue number2
DOIs
Publication statusPublished - 1 Feb 2018

Keywords

  • Q-switched
  • amplifier
  • erbium
  • injection locked
  • solid state

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Wang, S., Gao, C., Shi, Y., Song, R., Na, Q., Gao, M., & Wang, Q. (2018). 1645-nm single-frequency, injection-seeded Q-switched Er:YAG master oscillator and power amplifier. Optical Engineering, 57(2), Article 026120. https://doi.org/10.1117/1.OE.57.2.026120