Abstract
Direct growth of 100 mm long, semiconducting triple-walled carbon nanotubes (TWNTs) on Si substrates by chemical vapor depoistion is reported. By tailoring the temperature for a certain gas flow rate, a yield of nearly 90% of centimeterlong TWNTs is obtained. The TWNTs show an unprecedented structural homogeneity, in which each shell maintains a constant chiral index extending over a very large distance (>60mm). The semiconducting TWNTs can be directly fabricated into field-effect transistors. (Figure Presented)
Original language | English |
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Pages (from-to) | 1867-1871 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 22 |
Issue number | 16 |
DOIs | |
Publication status | Published - 22 Apr 2010 |
Externally published | Yes |