10 Gb/s GaAs PHEMT optical receiver preamplifier

Wei Feng; Tangsheng Chen; Feng Qian; Kai Shao; Fuxiao Li

10 Gb/s GaAs PHEMT optical receiver preamplifier

Wei Feng^*, Tangsheng Chen, Feng Qian, Kai Shao, Fuxiao Li

^*Corresponding author for this work

Nanjing Electronic Devices Institute

Research output: Contribution to journal › Article › peer-review

Abstract

This paper briefly analyzes the wide-band superiority of the distributed amplifier. A distributed preamplifier operating at 10 Gb/s was fabricated by NEDI's 0.5 μm GaAs PHEMT process. The preamplifier uses the technology of attenuation compensation and is made up of seven cascode stages. The test result indicates that the distributed transimpedance is suitable for a 10 Gb/s optical communication.

Original language	English
Pages (from-to)	77-79+104
Journal	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
Volume	26
Issue number	1
Publication status	Published - Feb 2006
Externally published	Yes

Keywords

Attenuation compensation
Distributed amplifier
GaAs
PHEMT technology
Preamplifier

Cite this

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title = "10 Gb/s GaAs PHEMT optical receiver preamplifier",

abstract = "This paper briefly analyzes the wide-band superiority of the distributed amplifier. A distributed preamplifier operating at 10 Gb/s was fabricated by NEDI's 0.5 μm GaAs PHEMT process. The preamplifier uses the technology of attenuation compensation and is made up of seven cascode stages. The test result indicates that the distributed transimpedance is suitable for a 10 Gb/s optical communication.",

keywords = "Attenuation compensation, Distributed amplifier, GaAs, PHEMT technology, Preamplifier",

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AU - Feng, Wei

AU - Chen, Tangsheng

AU - Qian, Feng

AU - Shao, Kai

AU - Li, Fuxiao

PY - 2006/2

Y1 - 2006/2

N2 - This paper briefly analyzes the wide-band superiority of the distributed amplifier. A distributed preamplifier operating at 10 Gb/s was fabricated by NEDI's 0.5 μm GaAs PHEMT process. The preamplifier uses the technology of attenuation compensation and is made up of seven cascode stages. The test result indicates that the distributed transimpedance is suitable for a 10 Gb/s optical communication.

AB - This paper briefly analyzes the wide-band superiority of the distributed amplifier. A distributed preamplifier operating at 10 Gb/s was fabricated by NEDI's 0.5 μm GaAs PHEMT process. The preamplifier uses the technology of attenuation compensation and is made up of seven cascode stages. The test result indicates that the distributed transimpedance is suitable for a 10 Gb/s optical communication.

KW - Attenuation compensation

KW - Distributed amplifier

KW - GaAs

KW - PHEMT technology

KW - Preamplifier

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SN - 1000-3819

VL - 26

SP - 77-79+104

JO - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

IS - 1

ER -

10 Gb/s GaAs PHEMT optical receiver preamplifier

Abstract

Keywords

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