TY - JOUR
T1 - 高 精 度 激 光 共 焦 半 导 体 晶 圆 厚 度 测 量
AU - Li, Zhaoyu
AU - Liu, Zihao
AU - Wang, Yaoying
AU - Qiu, Lirong
AU - Yang, Shuai
N1 - Publisher Copyright:
© 2024 Chinese Academy of Sciences. All rights reserved.
PY - 2024/4
Y1 - 2024/4
N2 - Addressing the need for precise non-contact measurement of semiconductor wafer thickness, this study introduces a method based on laser confocal technology that ensures remarkable accuracy. It utilizes a voice coil nanodisplacement platform for high-resolution actuation of a laser confocal optical probe, enabling precise axial scanning. This method relies on identifying the peak points on the confocal laser′s axial response curve, which are indicative of the objective lens′s focal point, to accurately align and position the wafer′s upper and lower surfaces. By accurately calculating the physical coordinates of each sampling point on the wafer surface through ray tracing algorithms, this technique achieves high-precision non-contact measurement of wafer thickness. A specialized laser confocal sensor for semiconductor wafer thickness measurement was developed, showcasing an axial resolution of under 5 nm, an axial scanning range of up to 5.7 mm, and repeatability in thickness measurement of under 100 nm across six wafer types. The process takes less than 400 ms for a single wafer. This research successfully applies confocal focusing technology to semiconductor measurement, offering a novel solution for high-precision, non-destructive, online wafer thickness measurement.
AB - Addressing the need for precise non-contact measurement of semiconductor wafer thickness, this study introduces a method based on laser confocal technology that ensures remarkable accuracy. It utilizes a voice coil nanodisplacement platform for high-resolution actuation of a laser confocal optical probe, enabling precise axial scanning. This method relies on identifying the peak points on the confocal laser′s axial response curve, which are indicative of the objective lens′s focal point, to accurately align and position the wafer′s upper and lower surfaces. By accurately calculating the physical coordinates of each sampling point on the wafer surface through ray tracing algorithms, this technique achieves high-precision non-contact measurement of wafer thickness. A specialized laser confocal sensor for semiconductor wafer thickness measurement was developed, showcasing an axial resolution of under 5 nm, an axial scanning range of up to 5.7 mm, and repeatability in thickness measurement of under 100 nm across six wafer types. The process takes less than 400 ms for a single wafer. This research successfully applies confocal focusing technology to semiconductor measurement, offering a novel solution for high-precision, non-destructive, online wafer thickness measurement.
KW - high precision
KW - laser confocal
KW - nondestructive measurement
KW - semiconductor wafer
KW - thickness measurement
UR - http://www.scopus.com/inward/record.url?scp=85190943044&partnerID=8YFLogxK
U2 - 10.37188/OPE.20243207.0956
DO - 10.37188/OPE.20243207.0956
M3 - 文章
AN - SCOPUS:85190943044
SN - 1004-924X
VL - 32
SP - 956
EP - 965
JO - Guangxue Jingmi Gongcheng/Optics and Precision Engineering
JF - Guangxue Jingmi Gongcheng/Optics and Precision Engineering
IS - 7
ER -