Abstract
CuInxGa1-xSe2 (CIGS) films were deposited on soda-lime glass by magnetron sputtering and selenization heat treatments. X-ray diffraction (XRD), high resolution transmission microscopy (HR-TEM), high-angle annular dark field (HAADF) image and X-ray energy dispersive spectrum (EDS) mapping were utilized to analyze the influence of selenization temperature on the characters of CIGS/Mo interface. It was found that CIGS/Mo interface was clear when the selenization temperature was 400℃. A MoSe2 thin layer and Na-riched second phase nanoparticles were detected at CIGS/Mo interface at 500℃. The MoSe2 layer became thicker and the Na-riched nanoparticles grew into a curved band at 600℃, therefore the CIGS/Mo interface developed into a multilayered structure of CIGS/Na-riched second phase/MoSe2/Mo. In addition, the orientations of MoSe2 grains may effect on the formation of second phases.
Translated title of the contribution | Influences of the Selenization Temperature on the Microstructures and Chemical Compositions of CIGS/Mo Interface |
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Original language | Chinese (Traditional) |
Pages (from-to) | 1787-1790 and 1819 |
Journal | Cailiao Daobao/Materials Review |
Volume | 32 |
Issue number | 6 |
DOIs | |
Publication status | Published - 10 Jun 2018 |