Dan Wang

He has been engaged in theoretical calculation research and method development of Physical property exploration of materials for a long time, and has published more than 20 articles in international journals such as Physical Review Letters, Nano Letters, Nano Today, and obtained 1 national patent. He has been invited to present at the academic Forum of Yale University and the academic forum of the Center for Computational Quantum Physics in New York. He won the Jilin Province Natural Science Academic Achievement Award as the first complete person. The ionization energy evaluation method for two-dimensional semiconductor defects developed has been used by nearly 20 institutions such as Rice University in the United States and Singapore Computing Institute. A continuum model for 2D material defect evaluation was developed and integrated with the open source first principles computing software JDFTx.

(1) Low dimensional materials and surface interface system
(2) Semiconductor material defects
(3) Anti-icing/ice control materials

2007.09-2011.06 Jilin University, Electronic Science and Technology, Bachelor/Bachelor of Engineering
2011.09-2017.06 Jilin University, Ph. D. in Physical Electronics/Ph. D. in Engineering

2018.04-2020.06 Rensselaer Polytechnic Institute, Postdoctoral Researcher
2020.07-2022.10 Postdoctoral Fellow, Yale University

1. Dan Wang, Dong Han, Xian-Bin Li, Sheng-Yi Xie, Nian-Ke Chen, Wen Quan Tian, Damien West, Hong-Bo Sun, and Shengbai Zhang, Determination of formation and ionization energies of charged defects in two-dimensional materials, Phys. Rev. Lett. 114, 196801 (2015).
2. Dan Wang, Xian-Bin Li, Dong Han, Wen Quan Tian, and Hong-Bo Sun, Engineering two-dimensional electronics by semiconductor defects, Nano Today 16, 30 (2017).
3. Dan Wang, Xian-Bin Li, and Hong-Bo Sun, Modulation Doping: A Strategy for 2D Materials Electronics, Nano Letters, 21, 6298 (2021).
4. Dan Wang, Dong Han, Xian-Bin Li, Nian-Ke Chen, Damien West, Vincent Meunier, Shengbai Zhang, and Hong-Bo Sun, Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: formulation and application to few-layer black phosphorus, Phys. Rev. B 96, 155424 (2017).
5. Dan Wang and Ravishankar Sundararaman, Layer dependence of defect charge transition levels in two-dimensional materials, Phys. Rev. B 101, 054103 (2020).
6. Dan Wang and Ravishankar Sundararaman, Substrate effects on charged defects in two-dimensional materials, Phys. Rev. Mater. 3, 083803 (2019). 7. Dan Wang, Dong Han, Damien West, Nian-Ke Chen, Sheng-Yi Xie, Wei Quan Tian, Vincent Meunier, Shengbai Zhang, and Xian-Bin Li, Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport, npj Comput. Mater. 5, 8 (2019).
8. Dan Wang, Xian-Bin Li, and Hong-Bo Sun, Native defects and substitutional impurities in two-dimensional monolayer InSe, Nanoscale 9, 11619 (2017).
9. Dan Wang, Dong Han, Xian-Bin Li, Sheng-Yi Xie, Nian-Ke Chen, Wei Quan Tian, Shengbai Zhang, and Hong-Bo Sun, Possible n/p-type conductivity of two-dimensional graphene oxide by boron and nitrogen doping: evaluated via constrained excitation, Appl. Phys. Lett. 109, 203113 (2016).
10. Sha Xia#, Dan Wang#, Nian-Ke Chen, Dong Han, Xian-Bin Li, and Hong-Bo Sun, Evaluation of charged defects in two-dimensional semiconductors for nanoelectronics: The WLZ extrapolation method, Annalen der Physik 532, 1900318 (2020).