摘要
A well-aligned Cu2O nanowire array was fabricated by the stress-induced method. A new stress-redistribution phenomenon related to the cooling procedure was observed and a creative growth procedure was demonstrated. High-quality Cu2O nanowires with an aspect ratio up to 300 and a growth density higher than 109 cm-2 can be derived under the optimum condition of cooling gradually for 4 h after heating for 5 h. A typical photovoltaic effect was demonstrated to exist in the Cu2O/Cu junction.
源语言 | 英语 |
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页(从-至) | 81-84 |
页数 | 4 |
期刊 | Scripta Materialia |
卷 | 66 |
期 | 2 |
DOI | |
出版状态 | 已出版 - 1月 2012 |
已对外发布 | 是 |