Quantum pumping through the surface states of a topological insulator

Hossein Nikoofard, Mahdi Esmaeilzadeh, Rouhollah Farghadan, Jia Tao Sun

科研成果: 期刊稿件文章同行评审

4 引用 (Scopus)
Plum Print visual indicator of research metrics
  • Citations
    • Citation Indexes: 4
  • Captures
    • Readers: 4
see details

摘要

We investigate quantum charge pumping through the surface states of a topological insulator (TI), i.e., Bi2Te3. We consider a device with two oscillating potentials for the generation of a dc current in the adiabatic pumping regime. Applying the exchange magnetic field, we show that the device can work as a memory read-out. Also, we show that by applying a static gate voltage the pumping device can work as a field-effect transistor. In addition, the pumped current obtained in our proposed device is significantly (more than three orders of magnitude) greater than the pumped current obtained previously for TI-based devices. These properties show that Bi2Te3 can be considered a good candidate for the fabrication of nanoelectronic devices based on TI as well as low-power and low-energy consumption devices in quantum computing.

源语言英语
文章编号165127
期刊Physical Review B
106
16
DOI
出版状态已出版 - 15 10月 2022

指纹

探究 'Quantum pumping through the surface states of a topological insulator' 的科研主题。它们共同构成独一无二的指纹。

引用此

Nikoofard, H., Esmaeilzadeh, M., Farghadan, R., & Sun, J. T. (2022). Quantum pumping through the surface states of a topological insulator. Physical Review B, 106(16), 文章 165127. https://doi.org/10.1103/PhysRevB.106.165127