摘要
A broadband model for Ground-Signal-Ground (GSG) pad in InP HBT technology is presented. The inductive parasitics of the structure is considered. A method to analytically extract the model parameters is proposed. For model extraction convenience, the pad is designed as structure of one-side. The model renders excellent agreement with the measured and simulated data over 1 to 325 GHz, for a pad structure manufactured in 0.5um InP HBT technology.
源语言 | 英语 |
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主期刊名 | 2018 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018 - Proceedings |
出版商 | Institute of Electrical and Electronics Engineers Inc. |
ISBN(电子版) | 9781538624166 |
DOI | |
出版状态 | 已出版 - 5 12月 2018 |
已对外发布 | 是 |
活动 | 10th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018 - Chengdu, 中国 期限: 6 5月 2018 → 9 5月 2018 |
出版系列
姓名 | 2018 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018 - Proceedings |
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会议
会议 | 10th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018 |
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国家/地区 | 中国 |
市 | Chengdu |
时期 | 6/05/18 → 9/05/18 |
指纹
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Xu, Z., Liu, J., Lu, H., Cheng, W., Qian, F., & Tao, H. (2018). A Broadband Model over 1-325 GHz for GSG Pad Structure in InP HBT Technology. 在 2018 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018 - Proceedings 文章 8563627 (2018 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICMMT.2018.8563627