Van der Waals heterostructures of germanene, stanene, and silicene with hexagonal boron nitride and their topological domain walls

Maoyuan Wang, Liping Liu, Cheng Cheng Liu, Yugui Yao

Research output: Contribution to journalArticlepeer-review

66 Citations (Scopus)

Abstract

We investigate van der Waals (vdW) heterostructures made of germanene, stanene, or silicene with hexagonal boron nitride (h-BN). The intriguing topological properties of these buckled honeycomb materials can be maintained and further engineered in the heterostructures, where the competition between the substrate effect and external electric fields can be used to control the tunable topological phase transitions. Using such heterostructures as building blocks, various vdW topological domain walls (DW) are designed, along which there exist valley polarized quantum spin Hall edge states or valley-contrasting edge states which are protected by valley(spin)- resolved topological charges and can be tailored by the patterning of the heterojunctions and by external fields.

Original languageEnglish
Article number155412
JournalPhysical Review B
Volume93
Issue number15
DOIs
Publication statusPublished - 11 Apr 2016

Fingerprint

Dive into the research topics of 'Van der Waals heterostructures of germanene, stanene, and silicene with hexagonal boron nitride and their topological domain walls'. Together they form a unique fingerprint.

Cite this