Valence electron structures analysis on relationship of Cu physical or mechanical properties and vacancy

Yun Fei Wang, Yun Kai Li, Ming Xia

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

For the purpose of studying vacancy effect on physics and mechanics property, authors advance a method of calculating mono-vacancy cell valence construction, and get 5 phase construction factors nA, σN, ρLN, F and α on electron layer. It indicates that vacancy increase electrical resistivity and intensity, and decrease plasticity, which are consistent with experiments. The paper open out the relation between vacancy and physics and mechanics property on electron layer.

Original languageEnglish
Title of host publicationAdvanced Engineering Materials III
Pages776-781
Number of pages6
DOIs
Publication statusPublished - 2013
Event3rd International Conference on Advanced Engineering Materials and Technology, AEMT 2013 - Zhangjiajie, China
Duration: 11 May 2013 → 12 May 2013

Publication series

NameAdvanced Materials Research
Volume750-752
ISSN (Print)1022-6680

Conference

Conference3rd International Conference on Advanced Engineering Materials and Technology, AEMT 2013
Country/TerritoryChina
CityZhangjiajie
Period11/05/13 → 12/05/13

Keywords

  • EET
  • Mechanical properties
  • Signal vacancy
  • Valence electron structures

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Wang, Y. F., Li, Y. K., & Xia, M. (2013). Valence electron structures analysis on relationship of Cu physical or mechanical properties and vacancy. In Advanced Engineering Materials III (pp. 776-781). (Advanced Materials Research; Vol. 750-752). https://doi.org/10.4028/www.scientific.net/AMR.750-752.776