Unveiling polytype transformation assisted growth mechanism in boron carbide nanowires

Ningning Song, Xiaodong Li*

*Corresponding author for this work

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Abstract

We demonstrate direct evidence that the lattice distortion, induced by boron carbide (BxCy) stoichiometry, assists the growth of boron carbide nanowires. The transformation between different polytypic boron carbide phases lowers the energy barrier for boron diffusion, promoting boron migration in the nanowire growth. An atomistic mass transport model has been established to explain such volume-diffusion-induced nanowire growth which cannot be explained by the conventional surface diffusion model alone. These findings significantly advance our understanding of nanowire growth processes and mass transport mechanisms and provide new guidelines for the design of nanowire-structured devices.

Original languageEnglish
Pages (from-to)11-17
Number of pages7
JournalJournal of Crystal Growth
Volume481
DOIs
Publication statusPublished - 1 Jan 2018
Externally publishedYes

Keywords

  • Boron carbide nanowire
  • Diffusion energy barrier
  • Growth mechanism
  • Volumetric diffusion model

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Song, N., & Li, X. (2018). Unveiling polytype transformation assisted growth mechanism in boron carbide nanowires. Journal of Crystal Growth, 481, 11-17. https://doi.org/10.1016/j.jcrysgro.2017.10.013