Unlocking enhanced photo-Fenton, night-Fenton, and photocatalytic activities of dual Z-scheme MoS2/WO3–x/Ag2S core-shell structure via defect engineering

Muhammad Abbas, Kashif Hussain, Navid Hussain Shah, Mubashar Ilyas, Rabia Batool, M. Ashfaq Ahmad*, Yanyan Cui, Yaling Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Memory catalysis and conventional Fenton reactions are intended to counteract prevailing energy and environmental crises; however, poor performance and the need for UV irradiation question their sustainability. Herein, we demonstrate defect-engineered, dual Z-scheme MoS2/WO3–x/Ag2S exhibiting enhanced photo-Fenton (PFR), night-Fenton (NFR), and photocatalytic activities (PR) against tetracycline (TC) and Rhodamine B (RhB). Defects enable the catalyst to store ample electrons just like metals, which play a vital role by exciting H2O2 during Fenton reactions. It removed 91.54 %, 76.43 %, and 83.39 % TC (40 mg L–1) in 100 min and registered degradation rate constants of 0.05379, 0.02858, and 0.04133 min–1 against RhB (20 mg L–1) during PFR, NFR, and PR respectively. The total organic carbon (TOC) removal rates reached 58.56 % and 60.88 % during TC and RhB degradations in PFR, respectively. Solid and Liquid EPR analysis shows it can excite H2O2 to carry Fenton reactions with and without light. It demonstrates wide pH adaptability and tremendous potential to simultaneously counter energy and environmental crises.

Original languageEnglish
Pages (from-to)160-170
Number of pages11
JournalJournal of Materials Science and Technology
Volume197
DOIs
Publication statusPublished - 20 Oct 2024

Keywords

  • Core-shell
  • Dual Z-scheme
  • Fenton reaction
  • Photolysis
  • TC
  • WO

Fingerprint

Dive into the research topics of 'Unlocking enhanced photo-Fenton, night-Fenton, and photocatalytic activities of dual Z-scheme MoS2/WO3–x/Ag2S core-shell structure via defect engineering'. Together they form a unique fingerprint.

Cite this