Ultrashallow Junction Electrodes in Low-Loss Silicon Microring Resonators

Bin Bin Xu; Gabriele G. De Boo; Brett C. Johnson; Miloš Rančić; Alvaro Casas Bedoya; Blair Morrison; Jeffrey C. McCallum; Benjamin J. Eggleton; Matthew J. Sellars; Chunming Yin; Sven Rogge

doi:10.1103/PhysRevApplied.15.044014

Ultrashallow Junction Electrodes in Low-Loss Silicon Microring Resonators

Bin Bin Xu, Gabriele G. De Boo, Brett C. Johnson, Miloš Rančić, Alvaro Casas Bedoya, Blair Morrison, Jeffrey C. McCallum, Benjamin J. Eggleton, Matthew J. Sellars, Chunming Yin^*, Sven Rogge

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challenging since low optical losses must be retained to realize high-quality operation. Here, we demonstrate that it is possible to place a metallic shallow phosphorus doped layer in a silicon microring cavity that can function at cryogenic temperatures. We verify that the shallow doping layer affects the local refractive index while inducing minimal losses with quality factors up to 105. This demonstration opens up a pathway to the integration of an electronic device, such as a single-electron transistor, into an optical circuit on the same material platform.

Original language	English
Article number	044014
Journal	Physical Review Applied
Volume	15
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevApplied.15.044014
Publication status	Published - Apr 2021
Externally published	Yes

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10.1103/PhysRevApplied.15.044014

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title = "Ultrashallow Junction Electrodes in Low-Loss Silicon Microring Resonators",

abstract = "Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challenging since low optical losses must be retained to realize high-quality operation. Here, we demonstrate that it is possible to place a metallic shallow phosphorus doped layer in a silicon microring cavity that can function at cryogenic temperatures. We verify that the shallow doping layer affects the local refractive index while inducing minimal losses with quality factors up to 105. This demonstration opens up a pathway to the integration of an electronic device, such as a single-electron transistor, into an optical circuit on the same material platform.",

author = "Xu, {Bin Bin} and {De Boo}, {Gabriele G.} and Johnson, {Brett C.} and Milo{\v s} Ran{\v c}i{\'c} and Bedoya, {Alvaro Casas} and Blair Morrison and McCallum, {Jeffrey C.} and Eggleton, {Benjamin J.} and Sellars, {Matthew J.} and Chunming Yin and Sven Rogge",

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AU - Xu, Bin Bin

AU - De Boo, Gabriele G.

AU - Johnson, Brett C.

AU - Rančić, Miloš

AU - Bedoya, Alvaro Casas

AU - Morrison, Blair

AU - McCallum, Jeffrey C.

AU - Eggleton, Benjamin J.

AU - Sellars, Matthew J.

AU - Yin, Chunming

AU - Rogge, Sven

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Ultrashallow Junction Electrodes in Low-Loss Silicon Microring Resonators

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