Total-Ionizing-Dose Effects on Piezoelectric Micromachined Ultrasonic Transducers

Wenjun Liao; En Xia Zhang; Michael L. Alles; Cher Xuan Zhang; Huiqi Gong; Kai Ni; Andrew L. Sternberg; Huikai Xie; Daniel M. Fleetwood; Robert A. Reed; Ronald D. Schrimpf

doi:10.1109/TNS.2016.2631470

Total-Ionizing-Dose Effects on Piezoelectric Micromachined Ultrasonic Transducers

Wenjun Liao, En Xia Zhang, Michael L. Alles, Cher Xuan Zhang, Huiqi Gong, Kai Ni, Andrew L. Sternberg, Huikai Xie, Daniel M. Fleetwood, Robert A. Reed, Ronald D. Schrimpf

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Total-ionizing-dose (TID) effects on piezoelectric micromachined ultrasonic transducers (pMUTs) are investigated using 10-keV X-rays under different bias conditions. The corresponding changes in resonant frequency and quality factor are evaluated using impedance analysis methods. Radiation-generated electrons or holes are trapped in the pre-existing defects of piezoelectric materials. Therefore, the sensitivity of pMUTs to X-ray irradiation depends strongly on the device bias during irradiation. The trapped charges change stress and strain in the materials due to the inverse piezoelectric effect, resulting in resonant frequency shifts and quality factor variation.

Original language	English
Article number	7752924
Pages (from-to)	233-238
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	64
Issue number	1
DOIs	https://doi.org/10.1109/TNS.2016.2631470
Publication status	Published - Jan 2017
Externally published	Yes

Keywords

Piezoelectric MEMS
pMUTs
quality factor
resonant frequency
total ionization dose

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10.1109/TNS.2016.2631470

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title = "Total-Ionizing-Dose Effects on Piezoelectric Micromachined Ultrasonic Transducers",

abstract = "Total-ionizing-dose (TID) effects on piezoelectric micromachined ultrasonic transducers (pMUTs) are investigated using 10-keV X-rays under different bias conditions. The corresponding changes in resonant frequency and quality factor are evaluated using impedance analysis methods. Radiation-generated electrons or holes are trapped in the pre-existing defects of piezoelectric materials. Therefore, the sensitivity of pMUTs to X-ray irradiation depends strongly on the device bias during irradiation. The trapped charges change stress and strain in the materials due to the inverse piezoelectric effect, resulting in resonant frequency shifts and quality factor variation.",

keywords = "Piezoelectric MEMS, pMUTs, quality factor, resonant frequency, total ionization dose",

author = "Wenjun Liao and Zhang, {En Xia} and Alles, {Michael L.} and Zhang, {Cher Xuan} and Huiqi Gong and Kai Ni and Sternberg, {Andrew L.} and Huikai Xie and Fleetwood, {Daniel M.} and Reed, {Robert A.} and Schrimpf, {Ronald D.}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2017",

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doi = "10.1109/TNS.2016.2631470",

language = "English",

volume = "64",

pages = "233--238",

journal = "IEEE Transactions on Nuclear Science",

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TY - JOUR

T1 - Total-Ionizing-Dose Effects on Piezoelectric Micromachined Ultrasonic Transducers

AU - Liao, Wenjun

AU - Zhang, En Xia

AU - Alles, Michael L.

AU - Zhang, Cher Xuan

AU - Gong, Huiqi

AU - Ni, Kai

AU - Sternberg, Andrew L.

AU - Xie, Huikai

AU - Fleetwood, Daniel M.

AU - Reed, Robert A.

AU - Schrimpf, Ronald D.

PY - 2017/1

Y1 - 2017/1

N2 - Total-ionizing-dose (TID) effects on piezoelectric micromachined ultrasonic transducers (pMUTs) are investigated using 10-keV X-rays under different bias conditions. The corresponding changes in resonant frequency and quality factor are evaluated using impedance analysis methods. Radiation-generated electrons or holes are trapped in the pre-existing defects of piezoelectric materials. Therefore, the sensitivity of pMUTs to X-ray irradiation depends strongly on the device bias during irradiation. The trapped charges change stress and strain in the materials due to the inverse piezoelectric effect, resulting in resonant frequency shifts and quality factor variation.

AB - Total-ionizing-dose (TID) effects on piezoelectric micromachined ultrasonic transducers (pMUTs) are investigated using 10-keV X-rays under different bias conditions. The corresponding changes in resonant frequency and quality factor are evaluated using impedance analysis methods. Radiation-generated electrons or holes are trapped in the pre-existing defects of piezoelectric materials. Therefore, the sensitivity of pMUTs to X-ray irradiation depends strongly on the device bias during irradiation. The trapped charges change stress and strain in the materials due to the inverse piezoelectric effect, resulting in resonant frequency shifts and quality factor variation.

KW - Piezoelectric MEMS

KW - pMUTs

KW - quality factor

KW - resonant frequency

KW - total ionization dose

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DO - 10.1109/TNS.2016.2631470

M3 - Article

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JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

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ER -

Total-Ionizing-Dose Effects on Piezoelectric Micromachined Ultrasonic Transducers

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Keywords

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