The use of AFM in assessing the crack resistance of silicon wafers of various orientations

Vasilina A. Lapitskaya; Tatyana A. Kuznetsova; Anastasiya V. Khabarava; Sergei A. Chizhik; Sergei M. Aizikovich; Evgeniy V. Sadyrin; Boris I. Mitrin; Weifu Sun

doi:10.1016/j.engfracmech.2021.107926

The use of AFM in assessing the crack resistance of silicon wafers of various orientations

Vasilina A. Lapitskaya, Tatyana A. Kuznetsova, Anastasiya V. Khabarava, Sergei A. Chizhik, Sergei M. Aizikovich, Evgeniy V. Sadyrin^*, Boris I. Mitrin, Weifu Sun

^*Corresponding author for this work

School of Mechatronical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Crack resistance of silicon wafers plays a vital role in development of MEMS technologies containing beam elements. In the present research, this characteristic was determined using the Vickers tip indentation method. The critical stress intensity factor K_IC and fracture energy G_IC of silicon wafers of (1 0 0), (1 1 0), and (1 1 1) crystallographic orientations were evaluated. The measurements were supplemented by imaging of indents using atomic force microscopy (AFM). The correlation of these parameters with the specific surface energy, Young's modulus E and microhardness H was conducted. The values of E and H were evaluated by nanoindentation. The dependences of K_IC and G_IC on the load of silicon wafers of (1 0 0), (1 1 0), and (1 1 1) orientations were obtained.

Original language	English
Article number	107926
Journal	Engineering Fracture Mechanics
Volume	259
DOIs	https://doi.org/10.1016/j.engfracmech.2021.107926
Publication status	Published - Jan 2022

Keywords

Atomic force microscopy
Crack
Fracture energy
Fracture toughness
Orientation
Silicon
Specific surface energy
Surface damage

Access to Document

10.1016/j.engfracmech.2021.107926

Cite this

@article{7be81ca518174d5f9e81cfc6d22c4dd2,

title = "The use of AFM in assessing the crack resistance of silicon wafers of various orientations",

abstract = "Crack resistance of silicon wafers plays a vital role in development of MEMS technologies containing beam elements. In the present research, this characteristic was determined using the Vickers tip indentation method. The critical stress intensity factor KIC and fracture energy GIC of silicon wafers of (1 0 0), (1 1 0), and (1 1 1) crystallographic orientations were evaluated. The measurements were supplemented by imaging of indents using atomic force microscopy (AFM). The correlation of these parameters with the specific surface energy, Young's modulus E and microhardness H was conducted. The values of E and H were evaluated by nanoindentation. The dependences of KIC and GIC on the load of silicon wafers of (1 0 0), (1 1 0), and (1 1 1) orientations were obtained.",

keywords = "Atomic force microscopy, Crack, Fracture energy, Fracture toughness, Orientation, Silicon, Specific surface energy, Surface damage",

author = "Lapitskaya, {Vasilina A.} and Kuznetsova, {Tatyana A.} and Khabarava, {Anastasiya V.} and Chizhik, {Sergei A.} and Aizikovich, {Sergei M.} and Sadyrin, {Evgeniy V.} and Mitrin, {Boris I.} and Weifu Sun",

note = "Publisher Copyright: {\textcopyright} 2021",

year = "2022",

month = jan,

doi = "10.1016/j.engfracmech.2021.107926",

language = "English",

volume = "259",

journal = "Engineering Fracture Mechanics",

issn = "0013-7944",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - The use of AFM in assessing the crack resistance of silicon wafers of various orientations

AU - Lapitskaya, Vasilina A.

AU - Kuznetsova, Tatyana A.

AU - Khabarava, Anastasiya V.

AU - Chizhik, Sergei A.

AU - Aizikovich, Sergei M.

AU - Sadyrin, Evgeniy V.

AU - Mitrin, Boris I.

AU - Sun, Weifu

PY - 2022/1

Y1 - 2022/1

N2 - Crack resistance of silicon wafers plays a vital role in development of MEMS technologies containing beam elements. In the present research, this characteristic was determined using the Vickers tip indentation method. The critical stress intensity factor KIC and fracture energy GIC of silicon wafers of (1 0 0), (1 1 0), and (1 1 1) crystallographic orientations were evaluated. The measurements were supplemented by imaging of indents using atomic force microscopy (AFM). The correlation of these parameters with the specific surface energy, Young's modulus E and microhardness H was conducted. The values of E and H were evaluated by nanoindentation. The dependences of KIC and GIC on the load of silicon wafers of (1 0 0), (1 1 0), and (1 1 1) orientations were obtained.

AB - Crack resistance of silicon wafers plays a vital role in development of MEMS technologies containing beam elements. In the present research, this characteristic was determined using the Vickers tip indentation method. The critical stress intensity factor KIC and fracture energy GIC of silicon wafers of (1 0 0), (1 1 0), and (1 1 1) crystallographic orientations were evaluated. The measurements were supplemented by imaging of indents using atomic force microscopy (AFM). The correlation of these parameters with the specific surface energy, Young's modulus E and microhardness H was conducted. The values of E and H were evaluated by nanoindentation. The dependences of KIC and GIC on the load of silicon wafers of (1 0 0), (1 1 0), and (1 1 1) orientations were obtained.

KW - Atomic force microscopy

KW - Crack

KW - Fracture energy

KW - Fracture toughness

KW - Orientation

KW - Silicon

KW - Specific surface energy

KW - Surface damage

UR - http://www.scopus.com/inward/record.url?scp=85120902002&partnerID=8YFLogxK

U2 - 10.1016/j.engfracmech.2021.107926

DO - 10.1016/j.engfracmech.2021.107926

M3 - Article

AN - SCOPUS:85120902002

SN - 0013-7944

VL - 259

JO - Engineering Fracture Mechanics

JF - Engineering Fracture Mechanics

M1 - 107926

ER -

The use of AFM in assessing the crack resistance of silicon wafers of various orientations

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this