The superconductivity in boron-doped polycrystalline diamond thick films

Z. L. Wang, Q. Luo, L. W. Liu, C. Y. Li, H. X. Yang, H. F. Yang, J. J. Li, X. Y. Lu, Z. S. Jin, L. Lu, C. Z. Gu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

Boron-doped polycrystalline diamond thick film was prepared by a hot filament chemical vapor deposition (HFCVD) method. The morphology and structure of the diamond were evaluated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and micro-Raman spectroscopy. The carrier concentration of the boron-doped diamond was 7.3 × 1020 cm-3, determined by a Hall measurement system. The transport measurements show that the boron-doped diamond thick film is superconductive and the superconducting transition temperatures are 10 K for Tc onset and 8.3 K for zero resistance, and there is a strong diamagnetic response in the alternating current (AC) magnetic susceptibility of the boron-doped diamond sample below 8.9 K. Such a high Tc value can be attributed to the higher efficiency of doping, contraction of the reconstructed bonds and two-dimensional nature of the surface states for diamond thick films, all together inducing a stronger electron-phonon coupling.

Original languageEnglish
Pages (from-to)659-663
Number of pages5
JournalDiamond and Related Materials
Volume15
Issue number4-8
DOIs
Publication statusPublished - Apr 2006
Externally publishedYes

Keywords

  • Chemical vapor deposition
  • Diamond film
  • Superconductivity
  • p-type doping

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