Sub-10 MeV proton-induced single-event transients in 65 nm CMOS inverter chains

Zhenyu Wu; Yaqing Chi; Jianjun Chen; Pengcheng Huang; Bin Liang; Xiaodong Zhang

doi:10.1016/j.microrel.2021.114366

Sub-10 MeV proton-induced single-event transients in 65 nm CMOS inverter chains

Zhenyu Wu, Yaqing Chi^*, Jianjun Chen, Pengcheng Huang, Bin Liang, Xiaodong Zhang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Sub-10 MeV proton-induced single-event transients (SETs) were firstly reported in this work. Sub-10 MeV proton experiment demonstrates that sub-10 MeV proton-induced SET pulse can be wider than 200 ps and the average SET pulse-width increases with proton energy. The analysis indicates that the observed SETs are attributed to recoil ions and SETs induced by oxygen recoils can be much wider than those induced by silicon recoils. The average deposited charge of the recoil ions increases with proton energy, which is the reason for the increased average SET pulse-width as proton energy increases.

Original language	English
Article number	114366
Journal	Microelectronics Reliability
Volume	125
DOIs	https://doi.org/10.1016/j.microrel.2021.114366
Publication status	Published - Oct 2021
Externally published	Yes

Keywords

CMOS devices
Proton radiation
Recoil ions
Single-event transient

Access to Document

10.1016/j.microrel.2021.114366

Cite this

@article{4e5f8b8bb5f84e99952c0a393099b194,

title = "Sub-10 MeV proton-induced single-event transients in 65 nm CMOS inverter chains",

abstract = "Sub-10 MeV proton-induced single-event transients (SETs) were firstly reported in this work. Sub-10 MeV proton experiment demonstrates that sub-10 MeV proton-induced SET pulse can be wider than 200 ps and the average SET pulse-width increases with proton energy. The analysis indicates that the observed SETs are attributed to recoil ions and SETs induced by oxygen recoils can be much wider than those induced by silicon recoils. The average deposited charge of the recoil ions increases with proton energy, which is the reason for the increased average SET pulse-width as proton energy increases.",

keywords = "CMOS devices, Proton radiation, Recoil ions, Single-event transient",

author = "Zhenyu Wu and Yaqing Chi and Jianjun Chen and Pengcheng Huang and Bin Liang and Xiaodong Zhang",

note = "Publisher Copyright: {\textcopyright} 2021 Elsevier Ltd",

year = "2021",

month = oct,

doi = "10.1016/j.microrel.2021.114366",

language = "English",

volume = "125",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd.",

}

TY - JOUR

T1 - Sub-10 MeV proton-induced single-event transients in 65 nm CMOS inverter chains

AU - Wu, Zhenyu

AU - Chi, Yaqing

AU - Chen, Jianjun

AU - Huang, Pengcheng

AU - Liang, Bin

AU - Zhang, Xiaodong

PY - 2021/10

Y1 - 2021/10

N2 - Sub-10 MeV proton-induced single-event transients (SETs) were firstly reported in this work. Sub-10 MeV proton experiment demonstrates that sub-10 MeV proton-induced SET pulse can be wider than 200 ps and the average SET pulse-width increases with proton energy. The analysis indicates that the observed SETs are attributed to recoil ions and SETs induced by oxygen recoils can be much wider than those induced by silicon recoils. The average deposited charge of the recoil ions increases with proton energy, which is the reason for the increased average SET pulse-width as proton energy increases.

AB - Sub-10 MeV proton-induced single-event transients (SETs) were firstly reported in this work. Sub-10 MeV proton experiment demonstrates that sub-10 MeV proton-induced SET pulse can be wider than 200 ps and the average SET pulse-width increases with proton energy. The analysis indicates that the observed SETs are attributed to recoil ions and SETs induced by oxygen recoils can be much wider than those induced by silicon recoils. The average deposited charge of the recoil ions increases with proton energy, which is the reason for the increased average SET pulse-width as proton energy increases.

KW - CMOS devices

KW - Proton radiation

KW - Recoil ions

KW - Single-event transient

UR - http://www.scopus.com/inward/record.url?scp=85114159764&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2021.114366

DO - 10.1016/j.microrel.2021.114366

M3 - Article

AN - SCOPUS:85114159764

SN - 0026-2714

VL - 125

JO - Microelectronics Reliability

JF - Microelectronics Reliability

M1 - 114366

ER -

Sub-10 MeV proton-induced single-event transients in 65 nm CMOS inverter chains

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this