Abstract
A well-aligned Cu2O nanowire array was fabricated by the stress-induced method. A new stress-redistribution phenomenon related to the cooling procedure was observed and a creative growth procedure was demonstrated. High-quality Cu2O nanowires with an aspect ratio up to 300 and a growth density higher than 109 cm-2 can be derived under the optimum condition of cooling gradually for 4 h after heating for 5 h. A typical photovoltaic effect was demonstrated to exist in the Cu2O/Cu junction.
| Original language | English |
|---|---|
| Pages (from-to) | 81-84 |
| Number of pages | 4 |
| Journal | Scripta Materialia |
| Volume | 66 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Jan 2012 |
| Externally published | Yes |
Keywords
- Diffusion
- Nanostructure
- Stress-induced growth
- Thin films
- Whiskers
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Yue, Y., Chen, M., Ju, Y., & Zhang, L. (2012). Stress-induced growth of well-aligned Cu2O nanowire arrays and their photovoltaic effect. Scripta Materialia, 66(2), 81-84. https://doi.org/10.1016/j.scriptamat.2011.09.041