Spin-Valley Depolarization in van der Waals Heterostructures

Shu Wen Zheng, Dan Wang, Hai Yu Wang*, Hai Wang, Xin Chen, Le Yi Zhao, Lei Wang, Xian Bin Li, Hong Bo Sun

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The appearance of van der Waals heterostructures offers a new solution to valleytronics. Here, we observe the spin-valley depolarization process of electrons and holes in type-II MoS2-WSe2heterostructures simultaneously for the first time by valley-resolved broad-band femtosecond pump-probe experiments. The different depolarization paths between electrons and holes make them have different spin-valley polarization lifetimes. The spin-valley depolarization pathway of holes is mainly dominated by a phonon-assisted intervalley scattering process, while intra- and intervalley coupling can trigger additional depolarization pathways for electrons. The hole polarization lifetime can be further prolonged to more than three times in trilayer heterostructure 2MoS2-WSe2. For MoS2-WS2that has strong orbital hybridization of Mo and W atoms, both electrons and holes lose the spin-valley polarization extremely soon after charge separation, behaving similarly to intraexcitons in a monolayer. Our work advances the basic understanding of spin-valley depolarization of van der Waals heterostructures and facilitates the effort toward longer lifetime valleytronic devices for information transfer and storage applications.

Original languageEnglish
Pages (from-to)5501-5507
Number of pages7
JournalJournal of Physical Chemistry Letters
Volume13
Issue number24
DOIs
Publication statusPublished - 23 Jun 2022
Externally publishedYes

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