Solvo-solid preparation of Zn3N2 hollow structures; Their PL yellow emission and hydrogen absorption characteristics

Waheed S. Khan; Chuanbao Cao; Zulfiqar Ali; Faheem K. Butt; Niaz Ahmad Niaz; Anisullah Baig; Rafi Ud Din; M. H. Farooq; Fengping Wang; Qurrat Ul Ain

doi:10.1016/j.matlet.2011.04.071

Solvo-solid preparation of Zn₃N₂ hollow structures; Their PL yellow emission and hydrogen absorption characteristics

Waheed S. Khan, Chuanbao Cao^*, Zulfiqar Ali, Faheem K. Butt, Niaz Ahmad Niaz, Anisullah Baig, Rafi Ud Din, M. H. Farooq, Fengping Wang, Qurrat Ul Ain

^*Corresponding author for this work

School of Material Science and Engineering

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Zinc nitride (Zn₃N₂) hollow structures with 10-25 μm size have been prepared by solvo-solid approach using aqueous ammonia treated Zn precursor at reaction temperature of 600 °C for reaction time of 240 min under ammonia gas flow. The structural, compositional and morphological characterizations of the as-obtained product were performed by XRD, EDS and SEM. Room temperature photoluminescence (PL) spectrum of zinc nitride hollow structures (ZNHSs) exhibited UV emission band at 384 nm and a defect related yellow emission band at 605 nm. The first ever studies on hydrogen absorption characteristics of ZNHSs performed at 373 K showed an absorption capacity of 1.29 wt.%. Growth mechanism proposed for the formation of ZNHSs is also discussed briefly.

Original language	English
Pages (from-to)	2127-2129
Number of pages	3
Journal	Materials Letters
Volume	65
Issue number	14
DOIs	https://doi.org/10.1016/j.matlet.2011.04.071
Publication status	Published - 31 Jul 2011

Keywords

Microstructure
Optical properties
Semiconductors

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10.1016/j.matlet.2011.04.071

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title = "Solvo-solid preparation of Zn3N2 hollow structures; Their PL yellow emission and hydrogen absorption characteristics",

abstract = "Zinc nitride (Zn3N2) hollow structures with 10-25 μm size have been prepared by solvo-solid approach using aqueous ammonia treated Zn precursor at reaction temperature of 600 °C for reaction time of 240 min under ammonia gas flow. The structural, compositional and morphological characterizations of the as-obtained product were performed by XRD, EDS and SEM. Room temperature photoluminescence (PL) spectrum of zinc nitride hollow structures (ZNHSs) exhibited UV emission band at 384 nm and a defect related yellow emission band at 605 nm. The first ever studies on hydrogen absorption characteristics of ZNHSs performed at 373 K showed an absorption capacity of 1.29 wt.%. Growth mechanism proposed for the formation of ZNHSs is also discussed briefly.",

keywords = "Microstructure, Optical properties, Semiconductors",

author = "Khan, {Waheed S.} and Chuanbao Cao and Zulfiqar Ali and Butt, {Faheem K.} and {Ahmad Niaz}, Niaz and Anisullah Baig and {Ud Din}, Rafi and Farooq, {M. H.} and Fengping Wang and {Ul Ain}, Qurrat",

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doi = "10.1016/j.matlet.2011.04.071",

language = "English",

volume = "65",

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journal = "Materials Letters",

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T1 - Solvo-solid preparation of Zn3N2 hollow structures; Their PL yellow emission and hydrogen absorption characteristics

AU - Khan, Waheed S.

AU - Cao, Chuanbao

AU - Ali, Zulfiqar

AU - Butt, Faheem K.

AU - Ahmad Niaz, Niaz

AU - Baig, Anisullah

AU - Ud Din, Rafi

AU - Farooq, M. H.

AU - Wang, Fengping

AU - Ul Ain, Qurrat

PY - 2011/7/31

Y1 - 2011/7/31

N2 - Zinc nitride (Zn3N2) hollow structures with 10-25 μm size have been prepared by solvo-solid approach using aqueous ammonia treated Zn precursor at reaction temperature of 600 °C for reaction time of 240 min under ammonia gas flow. The structural, compositional and morphological characterizations of the as-obtained product were performed by XRD, EDS and SEM. Room temperature photoluminescence (PL) spectrum of zinc nitride hollow structures (ZNHSs) exhibited UV emission band at 384 nm and a defect related yellow emission band at 605 nm. The first ever studies on hydrogen absorption characteristics of ZNHSs performed at 373 K showed an absorption capacity of 1.29 wt.%. Growth mechanism proposed for the formation of ZNHSs is also discussed briefly.

AB - Zinc nitride (Zn3N2) hollow structures with 10-25 μm size have been prepared by solvo-solid approach using aqueous ammonia treated Zn precursor at reaction temperature of 600 °C for reaction time of 240 min under ammonia gas flow. The structural, compositional and morphological characterizations of the as-obtained product were performed by XRD, EDS and SEM. Room temperature photoluminescence (PL) spectrum of zinc nitride hollow structures (ZNHSs) exhibited UV emission band at 384 nm and a defect related yellow emission band at 605 nm. The first ever studies on hydrogen absorption characteristics of ZNHSs performed at 373 K showed an absorption capacity of 1.29 wt.%. Growth mechanism proposed for the formation of ZNHSs is also discussed briefly.

KW - Microstructure

KW - Optical properties

KW - Semiconductors

UR - http://www.scopus.com/inward/record.url?scp=79955884559&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2011.04.071

DO - 10.1016/j.matlet.2011.04.071

M3 - Article

AN - SCOPUS:79955884559

SN - 0167-577X

VL - 65

SP - 2127

EP - 2129

JO - Materials Letters

JF - Materials Letters

IS - 14

ER -

Solvo-solid preparation of Zn₃N₂ hollow structures; Their PL yellow emission and hydrogen absorption characteristics

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Keywords

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