Abstract
Niobium films were deposited on silicon carbide by chemical vapor deposition using niobium chloride and hydrogen at a temperature range of 900-1300°C. The solid-state reactions between the deposited niobium and silicon carbide matrix were studied by examining the obtained films using X-ray diffraction and energy dispersion spectroscopy. The results indicated that niobium silicides could be formed at the beginning, which blocked further reactions between carbon and niobium to form niobium carbides. When the deposition temperature was increased, silicon would diffuse outward, which allowed the formation of niobium carbides. The reaction process and mechanism are discussed based on the thermodynamics and kinetics.
Original language | English |
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Pages (from-to) | 413-417 |
Number of pages | 5 |
Journal | Journal of Coatings Technology and Research |
Volume | 6 |
Issue number | 3 |
DOIs | |
Publication status | Published - Sept 2009 |
Externally published | Yes |
Keywords
- Chemical vapor deposition
- Niobium
- Silicon carbide
- Solid-state reactions
- Thermodynamics