Size and shape dependent optical properties of InAs quantum dots

Ali Imran, Jianliang Jiang*, Deborah Eric, Muhammad Yousaf

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Citations (Scopus)

Abstract

In this study Electronic states and optical properties of self assembled InAs quantum dots embedded in GaAs matrix have been investigated. Their carrier confinement energies for single quantum dot are calculated by time-independent Schrödinger equation in which hamiltonianian of the system is based on effective mass approximation and position dependent electron momentum. Transition energy, absorption coefficient, refractive index and high frequency dielectric constant for spherical, cylindrical and conical quantum dots with different sizes in different dimensions are calculated. Comparative studies have revealed that size and shape greatly affect the electronic transition energies and absorption coefficient. Peaks of absorption coefficients have been found to be highly shape dependent.

Original languageEnglish
Title of host publication2017 International Conference on Optical Instruments and Technology - Micro/Nano Photonics
Subtitle of host publicationMaterials and Devices
EditorsXingjun Wang, Baojun Li, Ya Sha Yi
PublisherSPIE
ISBN (Electronic)9781510617551
DOIs
Publication statusPublished - 2018
Event2017 International Conference on Optical Instruments and Technology - Micro/Nano Photonics: Materials and Devices, OIT 2017 - Beijing, China
Duration: 28 Oct 201730 Oct 2017

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10622
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference2017 International Conference on Optical Instruments and Technology - Micro/Nano Photonics: Materials and Devices, OIT 2017
Country/TerritoryChina
CityBeijing
Period28/10/1730/10/17

Keywords

  • Modelling
  • Quantum dots
  • Transition energy
  • Wetting layer

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