Mao, J., Huang, L., Pan, Y., Gao, M., He, J., Zhou, H., Guo, H., Tian, Y., Zou, Q., Zhang, L., Zhang, H., Wang, Y., Du, S., Zhou, X., Castro Neto, A. H., & Gao, H. J. (2012). Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001). Applied Physics Letters, 100(9), Article 093101. https://doi.org/10.1063/1.3687190
Mao, Jinhai ; Huang, Li ; Pan, Yi et al. / Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001). In: Applied Physics Letters. 2012 ; Vol. 100, No. 9.
@article{552bf68d7af14d248627726426937a84,
title = "Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)",
abstract = "We develop a strategy for graphene growth on Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized by scanning tunneling microscopy/spectroscopy and angle resolved electron photoemission spectroscopy. These experiments show high structural and electronic qualities of this new composite. The SIA allows for an atomic control of the distance between the graphene and the metal substrate that can be used as a top gate. Our results show potential for the next generation of graphene-based materials with tailored properties.",
author = "Jinhai Mao and Li Huang and Yi Pan and Min Gao and Junfeng He and Haitao Zhou and Haiming Guo and Yuan Tian and Qiang Zou and Lizhi Zhang and Haigang Zhang and Yeliang Wang and Shixuan Du and Xingjiang Zhou and {Castro Neto}, {A. H.} and Gao, {Hong Jun}",
year = "2012",
month = feb,
day = "27",
doi = "10.1063/1.3687190",
language = "English",
volume = "100",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "9",
}
Mao, J, Huang, L, Pan, Y, Gao, M, He, J, Zhou, H, Guo, H, Tian, Y, Zou, Q, Zhang, L, Zhang, H, Wang, Y, Du, S, Zhou, X, Castro Neto, AH & Gao, HJ 2012, 'Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)', Applied Physics Letters, vol. 100, no. 9, 093101. https://doi.org/10.1063/1.3687190
Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001). / Mao, Jinhai; Huang, Li; Pan, Yi et al.
In:
Applied Physics Letters, Vol. 100, No. 9, 093101, 27.02.2012.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)
AU - Mao, Jinhai
AU - Huang, Li
AU - Pan, Yi
AU - Gao, Min
AU - He, Junfeng
AU - Zhou, Haitao
AU - Guo, Haiming
AU - Tian, Yuan
AU - Zou, Qiang
AU - Zhang, Lizhi
AU - Zhang, Haigang
AU - Wang, Yeliang
AU - Du, Shixuan
AU - Zhou, Xingjiang
AU - Castro Neto, A. H.
AU - Gao, Hong Jun
PY - 2012/2/27
Y1 - 2012/2/27
N2 - We develop a strategy for graphene growth on Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized by scanning tunneling microscopy/spectroscopy and angle resolved electron photoemission spectroscopy. These experiments show high structural and electronic qualities of this new composite. The SIA allows for an atomic control of the distance between the graphene and the metal substrate that can be used as a top gate. Our results show potential for the next generation of graphene-based materials with tailored properties.
AB - We develop a strategy for graphene growth on Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized by scanning tunneling microscopy/spectroscopy and angle resolved electron photoemission spectroscopy. These experiments show high structural and electronic qualities of this new composite. The SIA allows for an atomic control of the distance between the graphene and the metal substrate that can be used as a top gate. Our results show potential for the next generation of graphene-based materials with tailored properties.
UR - http://www.scopus.com/inward/record.url?scp=84863229141&partnerID=8YFLogxK
U2 - 10.1063/1.3687190
DO - 10.1063/1.3687190
M3 - Article
AN - SCOPUS:84863229141
SN - 0003-6951
VL - 100
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 9
M1 - 093101
ER -
Mao J, Huang L, Pan Y, Gao M, He J, Zhou H et al. Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001). Applied Physics Letters. 2012 Feb 27;100(9):093101. doi: 10.1063/1.3687190
