Self-Powered MoS2–PDPP3T Heterotransistor-Based Broadband Photodetectors

Mengxing Sun, Pengfei Yang, Dan Xie*, Yilin Sun, Jianlong Xu, Tianling Ren, Yanfeng Zhang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

41 Citations (Scopus)

Abstract

Photodetectors based on monolayer molybdenum disulfide (MoS2) have been demonstrated to exhibit good photodetecting capabilities. However, the relatively large bandgap of monolayer MoS2 has inhibited its application in near-infrared (NIR) photodetectors. Here, the narrow-bandgap organic semiconductor poly(diketopyrrolopyrrole-terthiophene) (PDPP3T) is firstly introduced to the monolayer MoS2 transistor as a NIR light absorbing layer. The MoS2–PDPP3T heterojunction-based transistor (heterotransistor) shows a broadband photodetecting range from ultraviolet (UV) to NIR region. About one or two orders of magnitude improvement of photoresponsivities have been realized for the MoS2–PDPP3T heterotransistor compared with that of MoS2 transistor. Moreover, due to the formation of MoS2–PDPP3T heterojunction and asymmetric electrodes, the MoS2–PDPP3T heterotransistor shows the self-powered behavior under zero bias voltage. Flexible MoS2–PDPP3T heterostructure photodetector is also fabricated on the poly(ethylene terephthalate) substrate with reliable performance, which enables a promising photodetection platform for future wearable optoelectronics.

Original languageEnglish
Article number1800580
JournalAdvanced Electronic Materials
Volume5
Issue number2
DOIs
Publication statusPublished - Feb 2019
Externally publishedYes

Keywords

  • MoS
  • NIR
  • PDPP3T
  • photodetectors
  • self-powered devices

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