Wan, Y., Hu, T., Mao, X., Fu, J., Yuan, K., Song, Y., Gan, X., Xu, X., Xue, M., Cheng, X., Huang, C., Yang, J., Dai, L., Zeng, H., & Kan, E. (2022). Room-Temperature Ferroelectricity in 1 T′ - ReS2 Multilayers. Physical Review Letters, 128(6), Article 067601. https://doi.org/10.1103/PhysRevLett.128.067601
Wan, Yi ; Hu, Ting ; Mao, Xiaoyu et al. / Room-Temperature Ferroelectricity in 1 T′ - ReS2 Multilayers. In: Physical Review Letters. 2022 ; Vol. 128, No. 6.
@article{7dfb114a59ca4874899de526f6a78b76,
title = "Room-Temperature Ferroelectricity in 1 T′ - ReS2 Multilayers",
abstract = "van der Waals materials possess an innate layer degree of freedom and thus are excellent candidates for exploring emergent two-dimensional ferroelectricity induced by interlayer translation. However, despite being theoretically predicted, experimental realization of this type of ferroelectricity is scarce at the current stage. Here, we demonstrate robust sliding ferroelectricity in semiconducting 1T′-ReS2 multilayers via a combined study of theory and experiment. Roomerature vertical ferroelectricity is observed in two-dimensional 1T′-ReS2 with layer number N≥2. The electric polarization stems from the uncompensated charge transfer between layers and can be switched by interlayer sliding. For bilayer 1T′-ReS2, the ferroelectric transition temperature is estimated to be ∼405 K from the second harmonic generation measurements. Our results highlight the importance of interlayer engineering in the realization of atomic-scale ferroelectricity.",
author = "Yi Wan and Ting Hu and Xiaoyu Mao and Jun Fu and Kai Yuan and Yu Song and Xuetao Gan and Xiaolong Xu and Mingzhu Xue and Xing Cheng and Chengxi Huang and Jinbo Yang and Lun Dai and Hualing Zeng and Erjun Kan",
note = "Publisher Copyright: {\textcopyright} 2022 American Physical Society.",
year = "2022",
month = feb,
day = "11",
doi = "10.1103/PhysRevLett.128.067601",
language = "English",
volume = "128",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "6",
}
Wan, Y, Hu, T, Mao, X, Fu, J, Yuan, K, Song, Y, Gan, X, Xu, X, Xue, M, Cheng, X, Huang, C, Yang, J, Dai, L, Zeng, H & Kan, E 2022, 'Room-Temperature Ferroelectricity in 1 T′ - ReS2 Multilayers', Physical Review Letters, vol. 128, no. 6, 067601. https://doi.org/10.1103/PhysRevLett.128.067601
Room-Temperature Ferroelectricity in 1 T′ - ReS2 Multilayers. / Wan, Yi; Hu, Ting; Mao, Xiaoyu et al.
In:
Physical Review Letters, Vol. 128, No. 6, 067601, 11.02.2022.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Room-Temperature Ferroelectricity in 1 T′ - ReS2 Multilayers
AU - Wan, Yi
AU - Hu, Ting
AU - Mao, Xiaoyu
AU - Fu, Jun
AU - Yuan, Kai
AU - Song, Yu
AU - Gan, Xuetao
AU - Xu, Xiaolong
AU - Xue, Mingzhu
AU - Cheng, Xing
AU - Huang, Chengxi
AU - Yang, Jinbo
AU - Dai, Lun
AU - Zeng, Hualing
AU - Kan, Erjun
N1 - Publisher Copyright:
© 2022 American Physical Society.
PY - 2022/2/11
Y1 - 2022/2/11
N2 - van der Waals materials possess an innate layer degree of freedom and thus are excellent candidates for exploring emergent two-dimensional ferroelectricity induced by interlayer translation. However, despite being theoretically predicted, experimental realization of this type of ferroelectricity is scarce at the current stage. Here, we demonstrate robust sliding ferroelectricity in semiconducting 1T′-ReS2 multilayers via a combined study of theory and experiment. Roomerature vertical ferroelectricity is observed in two-dimensional 1T′-ReS2 with layer number N≥2. The electric polarization stems from the uncompensated charge transfer between layers and can be switched by interlayer sliding. For bilayer 1T′-ReS2, the ferroelectric transition temperature is estimated to be ∼405 K from the second harmonic generation measurements. Our results highlight the importance of interlayer engineering in the realization of atomic-scale ferroelectricity.
AB - van der Waals materials possess an innate layer degree of freedom and thus are excellent candidates for exploring emergent two-dimensional ferroelectricity induced by interlayer translation. However, despite being theoretically predicted, experimental realization of this type of ferroelectricity is scarce at the current stage. Here, we demonstrate robust sliding ferroelectricity in semiconducting 1T′-ReS2 multilayers via a combined study of theory and experiment. Roomerature vertical ferroelectricity is observed in two-dimensional 1T′-ReS2 with layer number N≥2. The electric polarization stems from the uncompensated charge transfer between layers and can be switched by interlayer sliding. For bilayer 1T′-ReS2, the ferroelectric transition temperature is estimated to be ∼405 K from the second harmonic generation measurements. Our results highlight the importance of interlayer engineering in the realization of atomic-scale ferroelectricity.
UR - http://www.scopus.com/inward/record.url?scp=85124955236&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.128.067601
DO - 10.1103/PhysRevLett.128.067601
M3 - Article
C2 - 35213175
AN - SCOPUS:85124955236
SN - 0031-9007
VL - 128
JO - Physical Review Letters
JF - Physical Review Letters
IS - 6
M1 - 067601
ER -
Wan Y, Hu T, Mao X, Fu J, Yuan K, Song Y et al. Room-Temperature Ferroelectricity in 1 T′ - ReS2 Multilayers. Physical Review Letters. 2022 Feb 11;128(6):067601. doi: 10.1103/PhysRevLett.128.067601