Recent progress in 2D group-VA semiconductors: From theory to experiment

Shengli Zhang; Shiying Guo; Zhongfang Chen; Yeliang Wang; Hongjun Gao; Julio Gómez-Herrero; Pablo Ares; Félix Zamora; Zhen Zhu; Haibo Zeng

doi:10.1039/c7cs00125h

Recent progress in 2D group-VA semiconductors: From theory to experiment

Shengli Zhang, Shiying Guo, Zhongfang Chen, Yeliang Wang, Hongjun Gao, Julio Gómez-Herrero, Pablo Ares, Félix Zamora^*, Zhen Zhu, Haibo Zeng

^*Corresponding author for this work

Research output: Contribution to journal › Review article › peer-review

736 Citations (Scopus)

Abstract

Phosphorene, an emerging two-dimensional material, has received considerable attention due to its layer-controlled direct bandgap, high carrier mobility, negative Poisson's ratio and unique in-plane anisotropy. As cousins of phosphorene, 2D group-VA arsenene, antimonene and bismuthene have also garnered tremendous interest due to their intriguing structures and fascinating electronic properties. 2D group-VA family members are opening up brand-new opportunities for their multifunctional applications encompassing electronics, optoelectronics, topological spintronics, thermoelectrics, sensors, Li- or Na-batteries. In this review, we extensively explore the latest theoretical and experimental progress made in the fundamental properties, fabrications and applications of 2D group-VA materials, and offer perspectives and challenges for the future of this emerging field.

Original language	English
Pages (from-to)	982-1021
Number of pages	40
Journal	Chemical Society Reviews
Volume	47
Issue number	3
DOIs	https://doi.org/10.1039/c7cs00125h
Publication status	Published - 7 Feb 2018
Externally published	Yes

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@article{9ab9bcffb2e84ce3b719e2b771bcb974,

title = "Recent progress in 2D group-VA semiconductors: From theory to experiment",

abstract = "Phosphorene, an emerging two-dimensional material, has received considerable attention due to its layer-controlled direct bandgap, high carrier mobility, negative Poisson's ratio and unique in-plane anisotropy. As cousins of phosphorene, 2D group-VA arsenene, antimonene and bismuthene have also garnered tremendous interest due to their intriguing structures and fascinating electronic properties. 2D group-VA family members are opening up brand-new opportunities for their multifunctional applications encompassing electronics, optoelectronics, topological spintronics, thermoelectrics, sensors, Li- or Na-batteries. In this review, we extensively explore the latest theoretical and experimental progress made in the fundamental properties, fabrications and applications of 2D group-VA materials, and offer perspectives and challenges for the future of this emerging field.",

author = "Shengli Zhang and Shiying Guo and Zhongfang Chen and Yeliang Wang and Hongjun Gao and Julio G{\'o}mez-Herrero and Pablo Ares and F{\'e}lix Zamora and Zhen Zhu and Haibo Zeng",

note = "Publisher Copyright: {\textcopyright} 2018 The Royal Society of Chemistry.",

year = "2018",

month = feb,

day = "7",

doi = "10.1039/c7cs00125h",

language = "English",

volume = "47",

pages = "982--1021",

journal = "Chemical Society Reviews",

issn = "0306-0012",

publisher = "Royal Society of Chemistry",

number = "3",

}

TY - JOUR

T1 - Recent progress in 2D group-VA semiconductors

T2 - From theory to experiment

AU - Zhang, Shengli

AU - Guo, Shiying

AU - Chen, Zhongfang

AU - Wang, Yeliang

AU - Gao, Hongjun

AU - Gómez-Herrero, Julio

AU - Ares, Pablo

AU - Zamora, Félix

AU - Zhu, Zhen

AU - Zeng, Haibo

PY - 2018/2/7

Y1 - 2018/2/7

N2 - Phosphorene, an emerging two-dimensional material, has received considerable attention due to its layer-controlled direct bandgap, high carrier mobility, negative Poisson's ratio and unique in-plane anisotropy. As cousins of phosphorene, 2D group-VA arsenene, antimonene and bismuthene have also garnered tremendous interest due to their intriguing structures and fascinating electronic properties. 2D group-VA family members are opening up brand-new opportunities for their multifunctional applications encompassing electronics, optoelectronics, topological spintronics, thermoelectrics, sensors, Li- or Na-batteries. In this review, we extensively explore the latest theoretical and experimental progress made in the fundamental properties, fabrications and applications of 2D group-VA materials, and offer perspectives and challenges for the future of this emerging field.

AB - Phosphorene, an emerging two-dimensional material, has received considerable attention due to its layer-controlled direct bandgap, high carrier mobility, negative Poisson's ratio and unique in-plane anisotropy. As cousins of phosphorene, 2D group-VA arsenene, antimonene and bismuthene have also garnered tremendous interest due to their intriguing structures and fascinating electronic properties. 2D group-VA family members are opening up brand-new opportunities for their multifunctional applications encompassing electronics, optoelectronics, topological spintronics, thermoelectrics, sensors, Li- or Na-batteries. In this review, we extensively explore the latest theoretical and experimental progress made in the fundamental properties, fabrications and applications of 2D group-VA materials, and offer perspectives and challenges for the future of this emerging field.

UR - http://www.scopus.com/inward/record.url?scp=85041686378&partnerID=8YFLogxK

U2 - 10.1039/c7cs00125h

DO - 10.1039/c7cs00125h

M3 - Review article

C2 - 29210397

AN - SCOPUS:85041686378

SN - 0306-0012

VL - 47

SP - 982

EP - 1021

JO - Chemical Society Reviews

JF - Chemical Society Reviews

IS - 3

ER -

Recent progress in 2D group-VA semiconductors: From theory to experiment

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