Recent progress in 2D group-VA semiconductors: From theory to experiment

Shengli Zhang, Shiying Guo, Zhongfang Chen, Yeliang Wang, Hongjun Gao, Julio Gómez-Herrero, Pablo Ares, Félix Zamora*, Zhen Zhu, Haibo Zeng

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

764 Citations (Scopus)
Plum Print visual indicator of research metrics
  • Citations
    • Citation Indexes: 764
  • Captures
    • Readers: 306
see details

Abstract

Phosphorene, an emerging two-dimensional material, has received considerable attention due to its layer-controlled direct bandgap, high carrier mobility, negative Poisson's ratio and unique in-plane anisotropy. As cousins of phosphorene, 2D group-VA arsenene, antimonene and bismuthene have also garnered tremendous interest due to their intriguing structures and fascinating electronic properties. 2D group-VA family members are opening up brand-new opportunities for their multifunctional applications encompassing electronics, optoelectronics, topological spintronics, thermoelectrics, sensors, Li- or Na-batteries. In this review, we extensively explore the latest theoretical and experimental progress made in the fundamental properties, fabrications and applications of 2D group-VA materials, and offer perspectives and challenges for the future of this emerging field.

Original languageEnglish
Pages (from-to)982-1021
Number of pages40
JournalChemical Society Reviews
Volume47
Issue number3
DOIs
Publication statusPublished - 7 Feb 2018
Externally publishedYes

Fingerprint

Dive into the research topics of 'Recent progress in 2D group-VA semiconductors: From theory to experiment'. Together they form a unique fingerprint.

Cite this

Zhang, S., Guo, S., Chen, Z., Wang, Y., Gao, H., Gómez-Herrero, J., Ares, P., Zamora, F., Zhu, Z., & Zeng, H. (2018). Recent progress in 2D group-VA semiconductors: From theory to experiment. Chemical Society Reviews, 47(3), 982-1021. https://doi.org/10.1039/c7cs00125h