Quantum transport properties in single crystals of α-Bi4 I4

Dong Yun Chen*, Da Shuai Ma, Yongkai Li, Z. Z. Du, Xiaolu Xiong, Yuan He, Jun Xi Duan, Junfeng Han, Dong Chen, Wende Xiao, Yugui Yao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

We report the magnetotransport properties of α-Bi4I4 single crystals, which have a crystal structure similar to that of the quasi-one-dimensional topological insulator β-Bi4I4. Prominent Shubnikov-de Hass oscillations and weak antilocalization effect are observed in all measured samples. The angular-dependent magnetoresistance indicates that the behavior of Shubnikov-de Hass oscillations is two-dimensional (2D) in n-type samples, while it is three-dimensional (3D) in p-type samples. First-principles calculations show that the n-type samples have a 2D Fermi surface, while the p-type samples have a 3D Fermi surface. Considering the similar carrier density and mobility, we infer that the transport behaviors in both types of samples come from bulk electron contributions. In addition, a large negative magnetoresistance with a transverse configuration is observed in the n-type sample A1. All the results indicate that α-Bi4I4 is an important material platform for investigation of novel and interesting phenomena. Our work may also provide important references for studying the topological surface transport properties in β-Bi4I4 in the future.

Original languageEnglish
Article number114408
JournalPhysical Review Materials
Volume2
Issue number11
DOIs
Publication statusPublished - 27 Nov 2018

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