TY - JOUR
T1 - Piezotronics enabled artificial intelligence systems
AU - Hua, Qilin
AU - Cui, Xiao
AU - Ji, Keyu
AU - Wang, Bingjun
AU - Hu, Weiguo
N1 - Publisher Copyright:
© 2021 JPhys Energy. All right reserved.
PY - 2021/4
Y1 - 2021/4
N2 - Artificial intelligence (AI) technologies are accelerating the rapid innovations of multifunctional micro/nanosystems for boosting significant applications in flexible electronics, human healthcare, advanced robotics, autonomous control, and human machine interfaces. III-nitride semiconductors, e.g. GaN, AlN, InN, and their alloys, exhibit superior device characteristics in high-performance opto-/electronics, due to the unique polarization effects in the non-central-symmetric crystal. Piezotronics, coupled with piezoelectric polarization and semiconductor properties, can provide a novel approach for controlling charge carrier transport across the interfacial Schottky barrier or p n junction in these piezoelectric semiconductors. It means constructing a direct, real-Time, seamless interaction between human/machine and environment, which indicates great potential in emerging AI systems. In this article, we review the research progress of piezotronics on III-nitride semiconductors, summarize the fundamental theory of piezotronics, illustrate flexible device process, present emerging piezotronic intelligent GaN-based devices, and provide innovative supports for building adaptive and interactive AI systems.
AB - Artificial intelligence (AI) technologies are accelerating the rapid innovations of multifunctional micro/nanosystems for boosting significant applications in flexible electronics, human healthcare, advanced robotics, autonomous control, and human machine interfaces. III-nitride semiconductors, e.g. GaN, AlN, InN, and their alloys, exhibit superior device characteristics in high-performance opto-/electronics, due to the unique polarization effects in the non-central-symmetric crystal. Piezotronics, coupled with piezoelectric polarization and semiconductor properties, can provide a novel approach for controlling charge carrier transport across the interfacial Schottky barrier or p n junction in these piezoelectric semiconductors. It means constructing a direct, real-Time, seamless interaction between human/machine and environment, which indicates great potential in emerging AI systems. In this article, we review the research progress of piezotronics on III-nitride semiconductors, summarize the fundamental theory of piezotronics, illustrate flexible device process, present emerging piezotronic intelligent GaN-based devices, and provide innovative supports for building adaptive and interactive AI systems.
KW - III-nitrides
KW - artificial intelligence
KW - flexible
KW - memristor
KW - neuromorphic
KW - piezotronics
KW - transistor
UR - http://www.scopus.com/inward/record.url?scp=85104514924&partnerID=8YFLogxK
U2 - 10.1088/2515-7639/abe55f
DO - 10.1088/2515-7639/abe55f
M3 - Review article
AN - SCOPUS:85104514924
SN - 2515-7639
VL - 4
JO - JPhys Materials
JF - JPhys Materials
IS - 2
M1 - 022003
ER -