Piezotronics enabled artificial intelligence systems

Qilin Hua, Xiao Cui, Keyu Ji, Bingjun Wang, Weiguo Hu*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

8 Citations (Scopus)

Abstract

Artificial intelligence (AI) technologies are accelerating the rapid innovations of multifunctional micro/nanosystems for boosting significant applications in flexible electronics, human healthcare, advanced robotics, autonomous control, and human machine interfaces. III-nitride semiconductors, e.g. GaN, AlN, InN, and their alloys, exhibit superior device characteristics in high-performance opto-/electronics, due to the unique polarization effects in the non-central-symmetric crystal. Piezotronics, coupled with piezoelectric polarization and semiconductor properties, can provide a novel approach for controlling charge carrier transport across the interfacial Schottky barrier or p n junction in these piezoelectric semiconductors. It means constructing a direct, real-Time, seamless interaction between human/machine and environment, which indicates great potential in emerging AI systems. In this article, we review the research progress of piezotronics on III-nitride semiconductors, summarize the fundamental theory of piezotronics, illustrate flexible device process, present emerging piezotronic intelligent GaN-based devices, and provide innovative supports for building adaptive and interactive AI systems.

Original languageEnglish
Article number022003
JournalJPhys Materials
Volume4
Issue number2
DOIs
Publication statusPublished - Apr 2021
Externally publishedYes

Keywords

  • III-nitrides
  • artificial intelligence
  • flexible
  • memristor
  • neuromorphic
  • piezotronics
  • transistor

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