TY - JOUR
T1 - Performance Enhancement of FET-Based Photodetector by Blending P3HT With PMMA
AU - Zhang, Li
AU - Yang, Dan
AU - Wang, Yishan
AU - Wang, Haowei
AU - Song, Taojian
AU - Fu, Chunjie
AU - Yang, Shengyi
AU - Wei, Jinquan
AU - Liu, Ruibin
AU - Zou, Bingsuo
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/15
Y1 - 2015/7/15
N2 - In this letter, we presented a solution-processed photodetector with a configuration of field-effect transistor (FET) ITO/poly(4-vinylphenol) (PVP)/poly(3-hexylthiophene) (P3HT): poly(methyl methacrylate) (PMMA)/Au in which PVP acts as a dielectric layer and different PMMA content (20 wt.% ∼60 wt.%) in P3HT as active layer. The best electrical property of the photodetector under no illumination was obtained with 20 wt.% PMMA content and the maximum ON-OFF current ratio and hole mobility of the as-prepared devices are 329 and 1.6 × 10-3 cm2/V·s, respectively. Under illumination with wavelengths varying from 350 to 650 nm, however, the 50 wt.% PMMA content device demonstrated highest performance, showing a maximum photoresponsivity of 166.45 mA/W under 65∼μW/cm2 of 600-nm illumination. Atom force microscope (AFM) phase images of P3HT:PMMA film certify the phase separation between P3HT and PMMA, as well as the crystallinity improvement of P3HT film after blending PMMA. The performance of FET-based photodetector under illumination is discussed.
AB - In this letter, we presented a solution-processed photodetector with a configuration of field-effect transistor (FET) ITO/poly(4-vinylphenol) (PVP)/poly(3-hexylthiophene) (P3HT): poly(methyl methacrylate) (PMMA)/Au in which PVP acts as a dielectric layer and different PMMA content (20 wt.% ∼60 wt.%) in P3HT as active layer. The best electrical property of the photodetector under no illumination was obtained with 20 wt.% PMMA content and the maximum ON-OFF current ratio and hole mobility of the as-prepared devices are 329 and 1.6 × 10-3 cm2/V·s, respectively. Under illumination with wavelengths varying from 350 to 650 nm, however, the 50 wt.% PMMA content device demonstrated highest performance, showing a maximum photoresponsivity of 166.45 mA/W under 65∼μW/cm2 of 600-nm illumination. Atom force microscope (AFM) phase images of P3HT:PMMA film certify the phase separation between P3HT and PMMA, as well as the crystallinity improvement of P3HT film after blending PMMA. The performance of FET-based photodetector under illumination is discussed.
KW - Semiconductor-insulator blends
KW - phase separation
KW - photodetector
KW - poly(3-hexylthiophene) (P3HT)
KW - poly(methyl methacrylate) (PMMA)
UR - http://www.scopus.com/inward/record.url?scp=84934290751&partnerID=8YFLogxK
U2 - 10.1109/LPT.2015.2427796
DO - 10.1109/LPT.2015.2427796
M3 - Article
AN - SCOPUS:84934290751
SN - 1041-1135
VL - 27
SP - 1535
EP - 1538
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 14
M1 - 7101269
ER -