TY - JOUR
T1 - Oxidative ablation resistance behavior of HfC-based ultra-high temperature ceramics
AU - Yang, Wen Hui
AU - Zhu, Shi Zhen
AU - Wang, Zi Jian
AU - Liu, Ling
AU - Ma, Zhuang
N1 - Publisher Copyright:
© 2015, Chinese Ceramic Society. All right reserved.
PY - 2015/11/1
Y1 - 2015/11/1
N2 - The HfC-SiC composites with different volume ratio were prepared by hot press sintering. Then, the resultant samples were ablated by the supersonic speed gas flow for 600 s at 2300 K and 2500 K, respectively. The microstructure and composition of the ablated materials were analyzed by SEM and EDS. As can be seen, HfC-SiC composites have excellent oxidation and ablation resistance. The ablation resistance property of 30vol%SiC-HfC is superior to that of 50vol%SiC-HfC and pure HfC ceramics, which depends on the oxidation layer produced by HfCxOy and SiO2. Due to the weak adhesion, the oxidation layer and matrix have separated from each other, which can be resolved by adding SiC. With the temperature rising, the ablation resistance ability decreases and the thickness of ablation layer increases. Meanwhile, Si will lose as the temperature rises, which will result in the low density of oxide layer. As SiC is 50vol%, inner HfCxOy skeleton becomes looser and the ablation becomes serious.
AB - The HfC-SiC composites with different volume ratio were prepared by hot press sintering. Then, the resultant samples were ablated by the supersonic speed gas flow for 600 s at 2300 K and 2500 K, respectively. The microstructure and composition of the ablated materials were analyzed by SEM and EDS. As can be seen, HfC-SiC composites have excellent oxidation and ablation resistance. The ablation resistance property of 30vol%SiC-HfC is superior to that of 50vol%SiC-HfC and pure HfC ceramics, which depends on the oxidation layer produced by HfCxOy and SiO2. Due to the weak adhesion, the oxidation layer and matrix have separated from each other, which can be resolved by adding SiC. With the temperature rising, the ablation resistance ability decreases and the thickness of ablation layer increases. Meanwhile, Si will lose as the temperature rises, which will result in the low density of oxide layer. As SiC is 50vol%, inner HfCxOy skeleton becomes looser and the ablation becomes serious.
KW - HfC-SiC
KW - Oxidation and ablation resistance
KW - Ultra-high temperature ceramics (UHTC)
UR - http://www.scopus.com/inward/record.url?scp=84951818873&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:84951818873
SN - 1000-985X
VL - 44
SP - 3301
EP - 3305
JO - Rengong Jingti Xuebao/Journal of Synthetic Crystals
JF - Rengong Jingti Xuebao/Journal of Synthetic Crystals
IS - 11
ER -