Optimization of resolution-enhancement technology and dual-layer bottom-antireflective coatings in hypernumerical aperture lithography

Yanqiu Li; Yuan Zhou

doi:10.1116/1.2870220

Optimization of resolution-enhancement technology and dual-layer bottom-antireflective coatings in hypernumerical aperture lithography

Yanqiu Li^*, Yuan Zhou

^*Corresponding author for this work

School of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Resolution-enhancement technique (RET) and dual-layer bottom-antireflective coatings (DL-BARC) must be adopted in hypernumerical aperture (NA>1) lithography for a 45 nm half-pitch device. However, interactions of RET, polarization effect, and the resist process significantly impact on lithography performance. An in-house program and PROLITH 9.0 were employed to perform comprehensive optimization of RET and DL-BARC structures in order to improve pattern fidelity with a reasonable process window (PW). High-fidelity resist patterns are obtained when we employed optimum DL-BARC structures in conjunction with optimum RET. An alternating phase-shift mask and a conventional illumination is one kind of optimum combination of RET. An attenuated phase-shift mask and a cross-dipole illumination is the other one. Line-width changes are controlled within 4 nm. Sidewall angles are greater than 88°.

Original language	English
Pages (from-to)	534-540
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	26
Issue number	2
DOIs	https://doi.org/10.1116/1.2870220
Publication status	Published - 2008

Access to Document

10.1116/1.2870220

Cite this

Li, Y., & Zhou, Y. (2008). Optimization of resolution-enhancement technology and dual-layer bottom-antireflective coatings in hypernumerical aperture lithography. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26(2), 534-540. https://doi.org/10.1116/1.2870220

@article{28674451287d45d391677621973ab0b2,

title = "Optimization of resolution-enhancement technology and dual-layer bottom-antireflective coatings in hypernumerical aperture lithography",

abstract = "Resolution-enhancement technique (RET) and dual-layer bottom-antireflective coatings (DL-BARC) must be adopted in hypernumerical aperture (NA>1) lithography for a 45 nm half-pitch device. However, interactions of RET, polarization effect, and the resist process significantly impact on lithography performance. An in-house program and PROLITH 9.0 were employed to perform comprehensive optimization of RET and DL-BARC structures in order to improve pattern fidelity with a reasonable process window (PW). High-fidelity resist patterns are obtained when we employed optimum DL-BARC structures in conjunction with optimum RET. An alternating phase-shift mask and a conventional illumination is one kind of optimum combination of RET. An attenuated phase-shift mask and a cross-dipole illumination is the other one. Line-width changes are controlled within 4 nm. Sidewall angles are greater than 88°.",

author = "Yanqiu Li and Yuan Zhou",

year = "2008",

doi = "10.1116/1.2870220",

language = "English",

volume = "26",

pages = "534--540",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - Optimization of resolution-enhancement technology and dual-layer bottom-antireflective coatings in hypernumerical aperture lithography

AU - Li, Yanqiu

AU - Zhou, Yuan

PY - 2008

Y1 - 2008

N2 - Resolution-enhancement technique (RET) and dual-layer bottom-antireflective coatings (DL-BARC) must be adopted in hypernumerical aperture (NA>1) lithography for a 45 nm half-pitch device. However, interactions of RET, polarization effect, and the resist process significantly impact on lithography performance. An in-house program and PROLITH 9.0 were employed to perform comprehensive optimization of RET and DL-BARC structures in order to improve pattern fidelity with a reasonable process window (PW). High-fidelity resist patterns are obtained when we employed optimum DL-BARC structures in conjunction with optimum RET. An alternating phase-shift mask and a conventional illumination is one kind of optimum combination of RET. An attenuated phase-shift mask and a cross-dipole illumination is the other one. Line-width changes are controlled within 4 nm. Sidewall angles are greater than 88°.

AB - Resolution-enhancement technique (RET) and dual-layer bottom-antireflective coatings (DL-BARC) must be adopted in hypernumerical aperture (NA>1) lithography for a 45 nm half-pitch device. However, interactions of RET, polarization effect, and the resist process significantly impact on lithography performance. An in-house program and PROLITH 9.0 were employed to perform comprehensive optimization of RET and DL-BARC structures in order to improve pattern fidelity with a reasonable process window (PW). High-fidelity resist patterns are obtained when we employed optimum DL-BARC structures in conjunction with optimum RET. An alternating phase-shift mask and a conventional illumination is one kind of optimum combination of RET. An attenuated phase-shift mask and a cross-dipole illumination is the other one. Line-width changes are controlled within 4 nm. Sidewall angles are greater than 88°.

UR - http://www.scopus.com/inward/record.url?scp=41549104179&partnerID=8YFLogxK

U2 - 10.1116/1.2870220

DO - 10.1116/1.2870220

M3 - Article

AN - SCOPUS:41549104179

SN - 1071-1023

VL - 26

SP - 534

EP - 540

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 2

ER -

Optimization of resolution-enhancement technology and dual-layer bottom-antireflective coatings in hypernumerical aperture lithography

Abstract

Access to Document

Other files and links

Fingerprint

Cite this