Abstract
The advantages of touch mode of operation are near linear output, large over-range pressure and robust structure. And Silicon Carbide (SiC) is a promising material for the device operating in harsh environments. In this paper, a novel touch mode pressure sensor based on SiC is presented, and the process is illustrated detailedly. Based on the calculation and Finite Element Analysis, the structure parameters of the sensor are designed detailedly.
| Original language | English |
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| Title of host publication | Proceedings - IEEE 2011 10th International Conference on Electronic Measurement and Instruments, ICEMI 2011 |
| Pages | 333-335 |
| Number of pages | 3 |
| DOIs | |
| Publication status | Published - 2011 |
| Event | IEEE 2011 10th International Conference on Electronic Measurement and Instruments, ICEMI 2011 - Chengdu, China Duration: 16 Aug 2011 → 18 Aug 2011 |
Publication series
| Name | Proceedings - IEEE 2011 10th International Conference on Electronic Measurement and Instruments, ICEMI 2011 |
|---|---|
| Volume | 1 |
Conference
| Conference | IEEE 2011 10th International Conference on Electronic Measurement and Instruments, ICEMI 2011 |
|---|---|
| Country/Territory | China |
| City | Chengdu |
| Period | 16/08/11 → 18/08/11 |
Keywords
- PECVD SiC
- capacitive pressure sensor
- touch mode
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Li, M., Deng, J., & Gao, S. (2011). Novel touch mode capacitive pressure sensor based on SiC. In Proceedings - IEEE 2011 10th International Conference on Electronic Measurement and Instruments, ICEMI 2011 (pp. 333-335). Article 6037743 (Proceedings - IEEE 2011 10th International Conference on Electronic Measurement and Instruments, ICEMI 2011; Vol. 1). https://doi.org/10.1109/ICEMI.2011.6037743