Novel touch mode capacitive pressure sensor based on SiC

Minghui Li*, Jiahao Deng, Shiqiao Gao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

The advantages of touch mode of operation are near linear output, large over-range pressure and robust structure. And Silicon Carbide (SiC) is a promising material for the device operating in harsh environments. In this paper, a novel touch mode pressure sensor based on SiC is presented, and the process is illustrated detailedly. Based on the calculation and Finite Element Analysis, the structure parameters of the sensor are designed detailedly.

Original languageEnglish
Title of host publicationProceedings - IEEE 2011 10th International Conference on Electronic Measurement and Instruments, ICEMI 2011
Pages333-335
Number of pages3
DOIs
Publication statusPublished - 2011
EventIEEE 2011 10th International Conference on Electronic Measurement and Instruments, ICEMI 2011 - Chengdu, China
Duration: 16 Aug 201118 Aug 2011

Publication series

NameProceedings - IEEE 2011 10th International Conference on Electronic Measurement and Instruments, ICEMI 2011
Volume1

Conference

ConferenceIEEE 2011 10th International Conference on Electronic Measurement and Instruments, ICEMI 2011
Country/TerritoryChina
CityChengdu
Period16/08/1118/08/11

Keywords

  • PECVD SiC
  • capacitive pressure sensor
  • touch mode

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