MoS2 Field-Effect Transistors with Lead Zirconate-Titanate Ferroelectric Gating

Xiao Wen Zhang, Dan Xie, Jian Long Xu, Yi Lin Sun, Xian Li, Cheng Zhang, Rui Xuan Dai, Yuan Fan Zhao, Xin Ming Li, Xiao Li, Hong Wei Zhu

Research output: Contribution to journalArticlepeer-review

54 Citations (Scopus)

Abstract

We report back gate field-effect transistors (FETs) with few-layered MoS2 nanosheet controlled by lead-zirconate-titanate (PZT) ferroelectric gating. The MoS2 transistors with PZT gating (MoS2-PZT FETs) exhibit reproducible hysteresis and nonvolatile memory behaviors with high stability, which can be attributed to the polarization screening from interface adsorbates and charge dynamic trapping/detrapping into the interface defect states. The ON/OFF states ratios and memory windows have little change with the channel scaling from 2 μ m to 200 nm, revealing the channel scaling has not obvious influence on MoS2-PZT FET properties, which suggests MoS2-PZT FET a promising candidate for future non-volatile memory applications.

Original languageEnglish
Article number7116493
Pages (from-to)784-786
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number8
DOIs
Publication statusPublished - 1 Aug 2015
Externally publishedYes

Keywords

  • MoS2
  • PZT
  • field effect transistor
  • scaling down

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