Microstructure and ionic conductivity of alternating-multilayer structured Gd-doped ceria and zirconia thin films

Yiguang Wang; Linan An; L. V. Saraf; C. M. Wang; V. Shutthanandan; D. E. McCready; S. Thevuthasan

doi:10.1007/s10853-009-3269-2

Microstructure and ionic conductivity of alternating-multilayer structured Gd-doped ceria and zirconia thin films

Yiguang Wang^*, Linan An, L. V. Saraf, C. M. Wang, V. Shutthanandan, D. E. McCready, S. Thevuthasan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Multilayer thin film of Gd-doped ceria and zirconia have been grown by sputter-deposition on α-Al₂O₃ (0001) substrates. The films were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). The Gd-doped ceria and zirconia layers had the fluorite structure and are highly textured such that the (111) plane of the films parallel to the (0001) plane of the α-Al₂O₃. The epitaxial relationship can be written as ( 1 1 1)ZrO₂/CeO ₂//(000 1)Al₂₃ and [ 11 2ZrO ₂CeO₂//[ - 2 1 10]₂₃, respectively. The absence of Ce³⁺ features in the XPS spectra indicates that the Gd-doped ceria films are completely oxidized. The ionic conductivity of this structure shows great improvement as compared with that of the bulk crystalline material. This research provides insight on designing of material for low temperature electrolyte applications.

Original language	English
Pages (from-to)	2021-2026
Number of pages	6
Journal	Journal of Materials Science
Volume	44
Issue number	8
DOIs	https://doi.org/10.1007/s10853-009-3269-2
Publication status	Published - Apr 2009
Externally published	Yes

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title = "Microstructure and ionic conductivity of alternating-multilayer structured Gd-doped ceria and zirconia thin films",

abstract = "Multilayer thin film of Gd-doped ceria and zirconia have been grown by sputter-deposition on α-Al2O3 (0001) substrates. The films were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). The Gd-doped ceria and zirconia layers had the fluorite structure and are highly textured such that the (111) plane of the films parallel to the (0001) plane of the α-Al2O3. The epitaxial relationship can be written as ( 1 1 1)ZrO2/CeO 2//(000 1)Al23 and [ 11 2ZrO 2CeO2//[ - 2 1 10]23, respectively. The absence of Ce3+ features in the XPS spectra indicates that the Gd-doped ceria films are completely oxidized. The ionic conductivity of this structure shows great improvement as compared with that of the bulk crystalline material. This research provides insight on designing of material for low temperature electrolyte applications.",

author = "Yiguang Wang and Linan An and Saraf, {L. V.} and Wang, {C. M.} and V. Shutthanandan and McCready, {D. E.} and S. Thevuthasan",

year = "2009",

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doi = "10.1007/s10853-009-3269-2",

language = "English",

volume = "44",

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T1 - Microstructure and ionic conductivity of alternating-multilayer structured Gd-doped ceria and zirconia thin films

AU - Wang, Yiguang

AU - An, Linan

AU - Saraf, L. V.

AU - Wang, C. M.

AU - Shutthanandan, V.

AU - McCready, D. E.

AU - Thevuthasan, S.

PY - 2009/4

Y1 - 2009/4

N2 - Multilayer thin film of Gd-doped ceria and zirconia have been grown by sputter-deposition on α-Al2O3 (0001) substrates. The films were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). The Gd-doped ceria and zirconia layers had the fluorite structure and are highly textured such that the (111) plane of the films parallel to the (0001) plane of the α-Al2O3. The epitaxial relationship can be written as ( 1 1 1)ZrO2/CeO 2//(000 1)Al23 and [ 11 2ZrO 2CeO2//[ - 2 1 10]23, respectively. The absence of Ce3+ features in the XPS spectra indicates that the Gd-doped ceria films are completely oxidized. The ionic conductivity of this structure shows great improvement as compared with that of the bulk crystalline material. This research provides insight on designing of material for low temperature electrolyte applications.

AB - Multilayer thin film of Gd-doped ceria and zirconia have been grown by sputter-deposition on α-Al2O3 (0001) substrates. The films were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). The Gd-doped ceria and zirconia layers had the fluorite structure and are highly textured such that the (111) plane of the films parallel to the (0001) plane of the α-Al2O3. The epitaxial relationship can be written as ( 1 1 1)ZrO2/CeO 2//(000 1)Al23 and [ 11 2ZrO 2CeO2//[ - 2 1 10]23, respectively. The absence of Ce3+ features in the XPS spectra indicates that the Gd-doped ceria films are completely oxidized. The ionic conductivity of this structure shows great improvement as compared with that of the bulk crystalline material. This research provides insight on designing of material for low temperature electrolyte applications.

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VL - 44

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EP - 2026

JO - Journal of Materials Science

JF - Journal of Materials Science

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ER -

Microstructure and ionic conductivity of alternating-multilayer structured Gd-doped ceria and zirconia thin films

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