Micro-patterning research of silicon-based ferroelectric PMNT thin films

Qingtao Zhang; Yanqiu Li; Yonghong Shang

doi:10.1117/12.638531

Micro-patterning research of silicon-based ferroelectric PMNT thin films

Qingtao Zhang^*, Yanqiu Li, Yonghong Shang

^*Corresponding author for this work

CAS - Institute of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Lead magnesium niobate-lead titanate ((1-x) Pb (Mg_1/3Nb _2/3-xPbTiO₃, PMNT) solid solution thin films were prepared on silicon substrates by Sol-Gel method. The well crystallized thin films were prepared on 700°C for 1 hour and micro-patterning of PMNT thin films were researched by wet etching. PMNT etch rate higher than 2.4μm/min could be obtained with well etch profile by using HF/HNO₃/H ₂O. XRD analysis and ferroelectric property test showed that there were not the crystal lattice distortion and ferroelectric property change during PMNT etching. In the paper, the key technologies in the preparation and patterning of PMNT thin films were solved and had laid good technology foundation for the preparation of silicon-base ferroelectric thin film microfabricated devices.

Original language	English
Article number	603718
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6037
DOIs	https://doi.org/10.1117/12.638531
Publication status	Published - 2006
Externally published	Yes
Event	Device and Process Technologies for Microelectronics, MEMS, and Photonics IV - Brisbane, Australia Duration: 12 Dec 2005 → 14 Dec 2005

Keywords

Ferroelectric
Micro patterning
PMNT
Sol-Gel
Thin Films

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10.1117/12.638531

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title = "Micro-patterning research of silicon-based ferroelectric PMNT thin films",

abstract = "Lead magnesium niobate-lead titanate ((1-x) Pb (Mg1/3Nb 2/3-xPbTiO3, PMNT) solid solution thin films were prepared on silicon substrates by Sol-Gel method. The well crystallized thin films were prepared on 700°C for 1 hour and micro-patterning of PMNT thin films were researched by wet etching. PMNT etch rate higher than 2.4μm/min could be obtained with well etch profile by using HF/HNO3/H 2O. XRD analysis and ferroelectric property test showed that there were not the crystal lattice distortion and ferroelectric property change during PMNT etching. In the paper, the key technologies in the preparation and patterning of PMNT thin films were solved and had laid good technology foundation for the preparation of silicon-base ferroelectric thin film microfabricated devices.",

keywords = "Ferroelectric, Micro patterning, PMNT, Sol-Gel, Thin Films",

author = "Qingtao Zhang and Yanqiu Li and Yonghong Shang",

year = "2006",

doi = "10.1117/12.638531",

language = "English",

volume = "6037",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Device and Process Technologies for Microelectronics, MEMS, and Photonics IV ; Conference date: 12-12-2005 Through 14-12-2005",

}

TY - JOUR

T1 - Micro-patterning research of silicon-based ferroelectric PMNT thin films

AU - Zhang, Qingtao

AU - Li, Yanqiu

AU - Shang, Yonghong

PY - 2006

Y1 - 2006

N2 - Lead magnesium niobate-lead titanate ((1-x) Pb (Mg1/3Nb 2/3-xPbTiO3, PMNT) solid solution thin films were prepared on silicon substrates by Sol-Gel method. The well crystallized thin films were prepared on 700°C for 1 hour and micro-patterning of PMNT thin films were researched by wet etching. PMNT etch rate higher than 2.4μm/min could be obtained with well etch profile by using HF/HNO3/H 2O. XRD analysis and ferroelectric property test showed that there were not the crystal lattice distortion and ferroelectric property change during PMNT etching. In the paper, the key technologies in the preparation and patterning of PMNT thin films were solved and had laid good technology foundation for the preparation of silicon-base ferroelectric thin film microfabricated devices.

AB - Lead magnesium niobate-lead titanate ((1-x) Pb (Mg1/3Nb 2/3-xPbTiO3, PMNT) solid solution thin films were prepared on silicon substrates by Sol-Gel method. The well crystallized thin films were prepared on 700°C for 1 hour and micro-patterning of PMNT thin films were researched by wet etching. PMNT etch rate higher than 2.4μm/min could be obtained with well etch profile by using HF/HNO3/H 2O. XRD analysis and ferroelectric property test showed that there were not the crystal lattice distortion and ferroelectric property change during PMNT etching. In the paper, the key technologies in the preparation and patterning of PMNT thin films were solved and had laid good technology foundation for the preparation of silicon-base ferroelectric thin film microfabricated devices.

KW - Ferroelectric

KW - Micro patterning

KW - PMNT

KW - Sol-Gel

KW - Thin Films

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U2 - 10.1117/12.638531

DO - 10.1117/12.638531

M3 - Conference article

AN - SCOPUS:33645211914

SN - 0277-786X

VL - 6037

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 603718

T2 - Device and Process Technologies for Microelectronics, MEMS, and Photonics IV

Y2 - 12 December 2005 through 14 December 2005

ER -

Micro-patterning research of silicon-based ferroelectric PMNT thin films

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Keywords

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