Mask 3D model based on complex-valued convolution neural network for EUV lithography

Chengzhen Yu, Xu Ma*, Junbi Zhang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

The oblique incidence of extreme ultraviolet (EUV) light rays and the high aspect ratio of absorber layer on reflective mask induce pronounced mask three-dimensional (M3D) effects that significantly influence the imaging performance of EUV lithography. This paper proposes a fast learning-based M3D model dubbed complex-valued U-Net (CVU-Net) for EUV lithography simulation. The diffraction near-field (DNF) of EUV mask is calculated based on a set of complex-valued diffraction matrices, and each diffraction matrix can be rapidly synthesized using a well-trained CVU-Net. The network parameters are trained in a supervised manner. We set up a DNF dataset to train and test the proposed model. The comparison between the proposed method and some other M3D simulation methods is provided and discussed.

Original languageEnglish
Title of host publicationIWAPS 2022 - 2022 6th International Workshop on Advanced Patterning Solutions
EditorsYayi Wei, Tianchun Ye
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350397666
DOIs
Publication statusPublished - 2022
Event6th International Workshop on Advanced Patterning Solutions, IWAPS 2022 - Virtual, Online, China
Duration: 21 Oct 202222 Oct 2022

Publication series

NameIWAPS 2022 - 2022 6th International Workshop on Advanced Patterning Solutions

Conference

Conference6th International Workshop on Advanced Patterning Solutions, IWAPS 2022
Country/TerritoryChina
CityVirtual, Online
Period21/10/2222/10/22

Keywords

  • CVU-Net
  • EUV lithography
  • M3D model
  • diffraction near-field

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